Ultra-shallow junction formation in SOI using vacancy engineering

Gwilliam, RM, Cowern, NEB, Colombeau, B, Sealy, B and Smith, AJ (2006) Ultra-shallow junction formation in SOI using vacancy engineering Physics of Ionized Gases, 876. pp. 181-190.

Full text not available from this repository.

Abstract

Forming highly conducting, ultra-shallow boron doped layers, is well known to be a challenge for future CMOS devices. This paper reviews a technique known as vacancy engineering, which is a co-implant process that has been proven to be efficient in reducing anomalous effects, such as transient enhanced diffusion and dopant clustering. Due to relatively low improvement factors, vacancy engineering has never been implemented as an industrial process. However, recent advancements demonstrate that by optimizing the implant substrate and anneal parameters it is possible to produce low resistive, p-type layers with a high degree of thermal stability which rival the more preferred techniques used today.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Gwilliam, RM r.gwilliam@surrey.ac.uk Cowern, NEB Colombeau, B Sealy, B Smith, AJ a.j.smith@surrey.ac.uk
Date :	2006
Contributors :	Contribution Name Email ORCID Hadzievski, L Marinkovic, BP Simonovic, NS
Uncontrolled Keywords :	vacancy engineering, SOI, source/drain extensions, boron, TRANSIENT ENHANCED DIFFUSION, BORON-INTERSTITIAL CLUSTERS, ION-IMPLANTATION, SILICON, SI, TEMPERATURE, REDUCTION, DAMAGE, AMORPHIZATION, ACTIVATION
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:13
Last Modified :	24 Jan 2020 20:31
URI:	http://epubs.surrey.ac.uk/id/eprint/830499

Actions (login required)

View Item

Downloads