Strain-enhanced activation of Sb ultrashallow junctions

Bennett, NS, O'Reilly, L, Smith, AJ, Gwilliam, RM, McNally, PJ, Cowern, NEB and Sealy, BJ (2006) Strain-enhanced activation of Sb ultrashallow junctions Ion Implantation Technology, 866. pp. 54-57.

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Abstract

Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Bennett, NS O'Reilly, L Smith, AJ a.j.smith@surrey.ac.uk Gwilliam, RM r.gwilliam@surrey.ac.uk McNally, PJ Cowern, NEB Sealy, BJ
Date :	2006
Contributors :	Contribution Name Email ORCID Kirkby, KJ Chivers, D Gwilliam, R r.gwilliam@surrey.ac.uk Smith, A a.j.smith@surrey.ac.uk
Uncontrolled Keywords :	dopant activation, strained silicon, rapid thermal annealing, junction stability, DIFFUSION, SILICON, SI
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 11:13
Last Modified :	24 Jan 2020 20:31
URI:	http://epubs.surrey.ac.uk/id/eprint/830498

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