University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Strain-enhanced activation of Sb ultrashallow junctions

Bennett, NS, O'Reilly, L, Smith, AJ, Gwilliam, RM, McNally, PJ, Cowern, NEB and Sealy, BJ (2006) Strain-enhanced activation of Sb ultrashallow junctions Ion Implantation Technology, 866. pp. 54-57.

Full text not available from this repository.


Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained-Si. Results show a modest Rs reduction for arsenic layers, a result of a strain-induced mobility enhancement, whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. Tensile strain is shown to enhance the activation of dopant Sb whilst creating stable ultrashallow junctions when low-temperature processing is employed. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultrashallow junctions for use with strain-engineered CMOS devices.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Bennett, NS
O'Reilly, L
McNally, PJ
Cowern, NEB
Sealy, BJ
Date : 2006
Contributors :
Kirkby, KJ
Chivers, D
Uncontrolled Keywords : dopant activation, strained silicon, rapid thermal annealing, junction stability, DIFFUSION, SILICON, SI
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:13
Last Modified : 24 Jan 2020 20:31

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800