Erbium-doped silicon and porous silicon for optoelectronics
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Reed, GT and Kewell, AK (1996) Erbium-doped silicon and porous silicon for optoelectronics MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 40 (2-3). pp. 207-215.
Full text not available from this repository.| Item Type: | Article | |||||||||
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| Divisions : | Surrey research (other units) | |||||||||
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| Date : | 1 September 1996 | |||||||||
| DOI : | 10.1016/0921-5107(96)01657-1 | |||||||||
| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics, MOLECULAR-BEAM EPITAXY, ROOM-TEMPERATURE LUMINESCENCE, OPTICAL-PHASE MODULATOR, OXYNITRIDE WAVE-GUIDES, 1.54-MU-M LUMINESCENCE, EXCITATION MECHANISMS, MODE CHARACTERISTICS, LOCAL-STRUCTURE, CRYSTALLINE SI, SIMOX MATERIAL | |||||||||
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| Depositing User : | Symplectic Elements | |||||||||
| Date Deposited : | 17 May 2017 11:12 | |||||||||
| Last Modified : | 24 Jan 2020 20:30 | |||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/830456 |
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