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Enhanced n-type dopant solubility in tensile-strained Si

Bennett, NS, Radamson, HH, Beer, CS, Smith, AJ, Gwilliam, RM, Cowern, NEB and Sealy, BJ (2008) Enhanced n-type dopant solubility in tensile-strained Si THIN SOLID FILMS, 517 (1). pp. 331-333.

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The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation. (c) 2008 Elsevier B.V. All rights reserved.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Bennett, NS
Radamson, HH
Beer, CS
Cowern, NEB
Sealy, BJ
Date : 3 November 2008
DOI : 10.1016/j.tsf.2008.08.072
Uncontrolled Keywords : Antimony, Arsenic, Hall effect, Stress, Ion Implantation, Solid phase epitaxy, IMPLANTED SILICON, JUNCTIONS, SB
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 11:08
Last Modified : 24 Jan 2020 20:23

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