Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?

Bennett, NS, Smith, AJ, Gwilliam, RM, Webb, RP, Sealy, BJ, Cowern, NEB, O'Reilly, L and McNally, PJ (2008) Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 391-395.

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Abstract

The creation of stable, highly conductive ultrashallow junctions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a strong contender to replace As as the dopant of choice due to advantages in junction depth, junction steepness, and crucially, sheet resistance. While 0.7% strain reduces resistance for both As and Sb, a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall and secondary-ion mass spectroscopy measurements suggest this to be a consequence of a strain-induced Sb solubility enhancement following epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Advantages in junction depth, junction steepness, and dopant activation make Sb an interesting alternative to As for ultrashallow doping in strain-engineered complementary metal-oxide semiconductor devices. (c) 2008 American Vacuum Society.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Bennett, NS Smith, AJ a.j.smith@surrey.ac.uk Gwilliam, RM r.gwilliam@surrey.ac.uk Webb, RP r.webb@surrey.ac.uk Sealy, BJ Cowern, NEB O'Reilly, L McNally, PJ
Date :	January 2008
DOI :	10.1116/1.2816929
Uncontrolled Keywords :	IMPLANTED SILICON, SB, RECRYSTALLIZATION, REDISTRIBUTION, SOLUBILITY
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 10:58
Last Modified :	24 Jan 2020 20:08
URI:	http://epubs.surrey.ac.uk/id/eprint/829492

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