An improved modal gain model for semiconductor lasers

Lim, CG, Iezekiel, S and Snowden, CM (2005) An improved modal gain model for semiconductor lasers Proceedings of SPIE - The International Society for Optical Engineering, 5722. pp. 516-522.

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Abstract

The calculated gain spectrum of a semiconductor laser based on a generic modal gain model reveals a gain peak that is higher than measured. Analyses of the model and the gain mechanism in semiconductor lasers suggest that the accuracy of the model can be improved by re-formulating the carrier occupation probabilities associated with the model. As a result, good agreement between the optical gain spectrum calculated using the revised model and measured results is achieved.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Lim, CG Iezekiel, S Snowden, CM c.snowden@surrey.ac.uk
Date :	22 August 2005
DOI :	10.1117/12.590215
Depositing User :	Symplectic Elements
Date Deposited :	16 May 2017 12:33
Last Modified :	24 Jan 2020 13:08
URI:	http://epubs.surrey.ac.uk/id/eprint/814362

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