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An improved modal gain model for semiconductor lasers

Lim, CG, Iezekiel, S and Snowden, CM (2005) An improved modal gain model for semiconductor lasers Proceedings of SPIE - The International Society for Optical Engineering, 5722. pp. 516-522.

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The calculated gain spectrum of a semiconductor laser based on a generic modal gain model reveals a gain peak that is higher than measured. Analyses of the model and the gain mechanism in semiconductor lasers suggest that the accuracy of the model can be improved by re-formulating the carrier occupation probabilities associated with the model. As a result, good agreement between the optical gain spectrum calculated using the revised model and measured results is achieved.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Lim, CG
Iezekiel, S
Date : 22 August 2005
DOI : 10.1117/12.590215
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:33
Last Modified : 24 Jan 2020 13:08

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