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Modeling of thermal effects in semiconductor structures

Snowden, CM (1998) Modeling of thermal effects in semiconductor structures VLSI Design, 8 (1-4). pp. 53-58.

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A fully coupled electro-thermal hydrodynamic model is described which is suitable for modelling active devices. The model is applied to the non-isothermal simulation of pseudomorphic high electron mobility transistors (pHEMTs). A large-scale surface temperature model is described which allows thermal modelling of semiconductor devices and monolithic circuits. An example of the application of thermal modelling to monolithic circuit characterization is given.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Date : 1 December 1998
Depositing User : Symplectic Elements
Date Deposited : 16 May 2017 12:32
Last Modified : 24 Jan 2020 13:04

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