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PL and EL investigation of Cerium, Europium and Ytterbium-Doped silicon for active silicon photonic devices.

Mohammad Sofi, Imran (2017) PL and EL investigation of Cerium, Europium and Ytterbium-Doped silicon for active silicon photonic devices. Doctoral thesis, University of Surrey.

Text (PL and EL Investigation of Cerium, Europium and Ytterbium Doped Silicon for Active Silicon Photonic Devices.)
PhD Thesis - Imran Mohammad Sofi - 6032592.pdf - Version of Record
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One of the greatest challenges in silicon photonics has been to induce light emission in silicon, with the ultimate vision is to have fully silicon-based photonics emitters or lasers which can operate by both optical and electrical pumping. Comprehensive photoluminescence (PL) and electroluminescence (EL) studies are conducted on dislocation engineering light emitting diode structures based on silicon implanted (Si:B) with Ce, Eu, and Yb rare-earth (RE) ions. The PL and EL results show very bright luminescence intensity and dramatic red shifting in luminescence peaks which shows a possible novel phenomenon of RE energy transition modification. The modification is attributed to the direct transition from Si conduction band edge to RE manifolds〖 (_^2)F〗_(7/2)^ , 〖(_^2)F〗_(5/2)^ for 〖Ce〗^(3+), 〖(_^7)F〗_j^ (j=0 to 4) for 〖Eu〗^(3+), 〖(_^2)F〗_(5/2)^ and 〖(_^2)F〗_(7/2)^ for 〖Yb〗^(3+). The emissions are shifted from the conventional lowest internal energy transition in 〖Ce〗^(3+) from around blue spectrum at ~350 nm (due to (_^2)D_(3/2)^ excited state to the 〖(_^2)F〗_(7/2)^ , 〖(_^2)F〗_(5/2)^ transitions) to ~1.35 µm in Si:B&Ce. For 〖Eu〗^(3+) the emission is shifted from around the red spectrum at ~600 nm (due to (_^5)D_0^ excited state to the 〖(_^7)F〗_j^ transitions, j=0 to 4) to ~ 1.40 µm in Si:B&Eu and for 〖Yb〗^(3+) is shifted from slightly beyond the visible region at ~980 nm (due to 〖(_^2)F〗_(5/2)^ excited state to the 〖(_^2)F〗_(7/2)^ transition) to ~ 1.43 µm in Si:B&Yb samples. The new shifting of luminescence peak into NIR region is very important for optical communication in making LEDs and lasers.

Item Type: Thesis (Doctoral)
Subjects : Silicon Photonics
Divisions : Theses
Authors :
Mohammad Sofi,
Date : 28 April 2017
Funders : European Research Council (ERC)
Grant Title : ERC Advance Investigator
Copyright Disclaimer : This thesis is a presentation of my original research work. All the PL and EL measurement results presented in chapter 4, 5 and 6 are conducted by the author. Contributions of others are indicated clearly, with due reference to the literature, and acknowledgment of collaborative research and discussions. The PL and EL samples were fabricated by the late Professor Russell Gwilliam, Dr. Manon Lourenço, and Andy Smith. Ion implantation was performed in Ion Beam Centre, University of Surrey. The TEM provided within this thesis was performed by Professor Momir Milosavljević. The remainder of the work was performed under the supervision and guidance of Professor Kevin Homewood, the late Professor Russell Gwilliam and Dr. Manon Lourenço at the Advanced Technology Institute, University of Surrey.
Projects : Silicon integrated laser and optical amplifiers (SILAMP)
Contributors :
ContributionNameEmailORCID, Kevin, Russell, Roger
Depositing User : Imran Mohammad Sofi
Date Deposited : 05 May 2017 09:03
Last Modified : 11 Dec 2018 11:23

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