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GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Marko, IP (2017) GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics [Dataset]

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Item Type: Dataset
Divisions : Surrey research (other units)
Principal Investigator :
Principal InvestigatorEmail
Sweeney, Prof. Stephen J.UNSPECIFIED
Description : The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1−xBix/GaNyAs1−y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ∼ 3 mm utilising strain-balanced structures, a first for GaAs-based type-II QWs. Experimental measurements on a prototype GaAs0:967Bi0:033/GaN0:062As0:938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality exhibiting both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 mm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.
: Marko, IP
Publication Year of Data : 2017
Publication Date of Paper : 2017
Creation Dates : 2013-2016
Funder : EPSRC, EU-FP7
DOI : 10.15126/surreydata.00813792
Grant Title : Efficient Photonic Devices for Near- and Mid-Infrared Applications;Exploring Short Wavelength Limits for High Performance Quantum Cascade Lasers;Energy and the Physical Sciences: Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates;BIsmide An
Access Statement : Due to confidentiality agreements with research collaborators, supporting data can only be made available to bona fide researchers subject to a non-disclosure agreement.
Data Access Contact :
Data Access ContactEmail
External Data Location : internal location
Embargo Date :
1 April 2017
Data Format : doc-files, txt-data files, origing graphs, images
Contributors :
Sweeney, S.J.
Jin, S.R.
Hild, K.
Bushell, Z.L.
Discipline : Physics
Keywords : GaAsBi, GaNAs, type-II, photonics, quantum wells, near-infrared, mid-infrared, heterostructures
Data Collection Method : experimental measurements and theoretical calculations
Related Links :
Depositing User : Symplectic Elements
Date Deposited : 20 Mar 2017 11:07
Last Modified : 23 Jan 2020 09:58

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