Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

Hughes, MA, Lourenco, MA, Carey, JD, Ben, M and Homewood, KP (2014) Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies OPTICS EXPRESS, 22 (24). pp. 29292-29303.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :	Name Email ORCID Hughes, MA Lourenco, MA Carey, JD Ben, M Homewood, KP
Date :	1 December 2014
DOI :	10.1364/OE.22.029292
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Optics, MONONUCLEAR LANTHANOID COMPLEXES, ELECTRON-PARAMAGNETIC-RESONANCE, DOPED CHALCOGENIDE GLASS, LIGHT-EMITTING-DIODES, SINGLE-ION MAGNETS, MU-M LUMINESCENCE, ENERGY-LEVELS, DISLOCATION LOOPS, ERBIUM, PARAMETERS
Related URLs :	Author
Additional Information :	This paper was published in Journal of the Optical Society of America B and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website:http://dx.doi.org/10.1364/OE.22.029292. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.
Depositing User :	Symplectic Elements
Date Deposited :	17 Feb 2015 11:30
Last Modified :	31 Oct 2017 17:17
URI:	http://epubs.surrey.ac.uk/id/eprint/806990

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