An extrinsic component parameter extraction method for high power RF LDMOS transistors

Wood, J, Lamey, D, Guyonnet, M, Chan, D, Bridges, D, Aaen, PH and Monsauret, N (2008) An extrinsic component parameter extraction method for high power RF LDMOS transistors IEEE MTT-S International Microwave Symposium Digest. pp. 607-610.

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Abstract

A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling. This new method uses accurate manifold deembedding using electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The new extrinsic network accommodates feedback effects which are observed in high power transistors. This improved methodology allows us to achieve a good agreement between measured and modeled S-parameters in the frequency range of 0.5 to 6 GHz for different bias conditions. Large-signal verification of this new model shows a very good match with measurements at 2.14 GHz. © 2008 IEEE.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :	Name Email ORCID Wood, J Lamey, D Guyonnet, M Chan, D Bridges, D Aaen, PH Monsauret, N
Date :	2008
DOI :	10.1109/MWSYM.2008.4633239
Contributors :	Contribution Name Email ORCID http://www.loc.gov/loc.terms/relators/PBL IEEE,
Additional Information :	© 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User :	Symplectic Elements
Date Deposited :	23 Sep 2013 10:48
Last Modified :	31 Oct 2017 15:14
URI:	http://epubs.surrey.ac.uk/id/eprint/803142

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