On the development of CAD techniques suitable for the design of high-power RF transistors

Aaen, PH, Plá, JA and Balanis, CA (2005) On the development of CAD techniques suitable for the design of high-power RF transistors IEEE Transactions on Microwave Theory and Techniques, 53 (10). pp. 3067-3074.

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Abstract

A full-wave modeling procedure was developed to simulate the package, bonding wires, and MOS capacitors used in the design of matching networks found within RF/microwave power transistors. The complex packaging environment was segmented into its constituent components and simulation techniques were developed for each component, as well as the inter-element coupling. An S-parameter test fixture and package was developed that permits measurements of these types of devices. The simulation and measurement procedures were used to model various circuits. Measured S-parameters and those obtained using the full-wave methodology were in good agreement. Simulation results using an inductance-only bonding-wire model were performed and differences between the S-parameters were observed. A detailed examination of the loss introduced by the matching network was performed and simulations and measurements matched closely. © 2005 IEEE.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :	Name Email ORCID Aaen, PH Plá, JA Balanis, CA
Date :	October 2005
DOI :	10.1109/TMTT.2005.855129
Additional Information :	© 2005 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User :	Symplectic Elements
Date Deposited :	23 Sep 2013 12:49
Last Modified :	31 Oct 2017 15:13
URI:	http://epubs.surrey.ac.uk/id/eprint/800772

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