Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes
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Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM and Homewood, KP (2005) Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes JOURNAL OF APPLIED PHYSICS, 97 (7), ARTN 0.
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| Item Type: | Article | ||||||||||||||||||
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| Divisions : | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre | ||||||||||||||||||
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| Date : | 1 April 2005 | ||||||||||||||||||
| DOI : | 10.1063/1.1866492 | ||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, ION-IMPLANTED SILICON, SIZE-DISTRIBUTION, EXTENDED DEFECTS, DIFFUSION, BEHAVIOR | ||||||||||||||||||
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| Depositing User : | Mr Adam Field | ||||||||||||||||||
| Date Deposited : | 27 May 2010 14:05 | ||||||||||||||||||
| Last Modified : | 31 Oct 2017 13:56 | ||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/78 |
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