Carbon nanotube field effect transistor measurements in vacuum

Yahya, I, Stolojan, V, Clowes, S, Mustaza, SM and Silva, SRP (2010) Carbon nanotube field effect transistor measurements in vacuum In: ICSE 2010, 2010-06-28 - 2010-06-30, Melaka, Malaysia.

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Abstract

Three terminal measurements on a carbon nanotube field effect transistor (CNTFET) were carried out in high vacuum and the ambient, and its performance compared. The on-off current ratio, ION/IOFF, were 102 and 105 for devices operated in high vacuum and in ambient air, respectively. Here, we show that the conversion of p-type to ambipolar behavior may largely be attributed to the O2 in ambient doping the single walled carbon nanotubes (SWCNTs) in the active channel which consists of bundles of SWCNTs. Switching behaviour of these devices, with respect to constituent types of SWCNTs in the bundles will be discussed.

Item Type:	Conference or Workshop Item (UNSPECIFIED)
Divisions :	Surrey research (other units)
Authors :	Yahya, I, Stolojan, V, Clowes, S, Mustaza, SM and Silva, SRP
Date :	2010
DOI :	10.1109/SMELEC.2010.5549562
Contributors :	Contribution Name Email ORCID http://www.loc.gov/loc.terms/relators/PBL IEEE,
Depositing User :	Symplectic Elements
Date Deposited :	04 Feb 2013 10:07
Last Modified :	23 Jan 2020 12:56
URI:	http://epubs.surrey.ac.uk/id/eprint/745832

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