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Investigation of the growth mechanisms of a-CH coatings deposited by pulsed reactive magnetron sputtering

Lopez-Santos, C, Colaux, JL, Lucas, S and Gonzalez, JC (2012) Investigation of the growth mechanisms of a-CH coatings deposited by pulsed reactive magnetron sputtering Journal of Physical Chemistry C, 116 (22). pp. 12017-12026.

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The study of the growth mechanisms of amorphous hydrogenated carbon coatings (a-CH ) deposited by reactive pulsed magnetron discharge in Ar + C H , Ar + H , and Ar + C H + H low-pressure atmospheres is presented in this work. Hydrogen-containing species of the reactant gas affect the microstructure and surface properties of the a-CH thin films. The dynamic scaling theory has been used to relate the main reactive species involved in the deposition process to the growth mechanisms of the thin film by means of the analysis of the roughness evolution. Anomalous scaling effects have been observed in smooth a-CH coatings. Dynamic scaling exponents α, β, and z indicate a general growth controlled by surface diffusion mechanisms. Hydrogen species have an influence on the lateral growth of the a-CH coatings and are involved in the development of a polymeric-like structure. Meanwhile, hydrocarbon species promote the generation of higher aggregates, which increases the roughness of a more sp clustering structure of the a-CH coating. © 2012 American Chemical Society.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Lopez-Santos, C
Colaux, JL
Lucas, S
Gonzalez, JC
Date : 7 June 2012
DOI : 10.1021/jp300697s
Additional Information : This document is the Accepted Manuscript version of a Published Work that appeared in final form in [Journal of Physical Chemistry C ], copyright © American Chemical Society after peer review and technical editing by the publisher.To access the final edited and published work see <a href="10.1021/jp300697s".
Depositing User : Symplectic Elements
Date Deposited : 22 Feb 2013 10:05
Last Modified : 31 Oct 2017 14:56

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