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Di-carbon defects in annealed highly carbon doped GaAs

Wagner, J, Newman, RC, Davidson, BR, Westwater, SP, Bullough, TJ, Joyce, TB, Latham, CD, Jones, R and Öberg, S (1997) Di-carbon defects in annealed highly carbon doped GaAs Physical Review Letters, 78 (1). pp. 74-77.

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Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm-1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm-1 from a different C-C complex.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Chemistry
Authors :
Wagner, J
Newman, RC
Davidson, BR
Westwater, SP
Bullough, TJ
Joyce, TB
Latham, CD
Jones, R
Öberg, S
Date : 6 January 1997
DOI : 10.1103/PhysRevLett.78.74
Related URLs :
Additional Information : Copyright 1997 The American Physical Society.
Depositing User : Symplectic Elements
Date Deposited : 14 Dec 2012 12:43
Last Modified : 31 Oct 2017 14:53

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