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Current percolation in ultrathin channel nanocrystalline silicon transistors

Guo, X, Silva, SRP and Ishii, T (2008) Current percolation in ultrathin channel nanocrystalline silicon transistors APPLIED PHYSICS LETTERS, 93 (4), ARTN 0.

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The ultrathin channel nanocrystalline silicon transistor shows greatly improved switching performance and has demonstrated its candidacy for low power applications. In this work, by careful observation of the current-voltage and threshold voltage characteristics, we find that current percolation occurs when the channel is thinner than 3.0 nm due to strong quantum confinement induced large potential variations over the channel. We show that the device channel width must be at least 0.3 mu m to avoid percolative "pinch off" for 0.5 mu m channel length devices. Theoretical analysis performed on the devices agrees well with the experimental data and provides important guidelines to model and optimize the devices for circuit design. (C) 2008 American Institute of Physics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors : Guo, X, Silva, SRP and Ishii, T
Date : 28 July 2008
DOI : 10.1063/1.2965807
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, CONDUCTION, MEMORY, FILM
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Additional Information :

Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Applied Physics Letters, 93 (4) 042105 and may be found at X. Guo, ,T. Ishii & S. R. P. Silva, Appl. Phys.Lett. 93, 042105 (2008)

Depositing User : Mr Adam Field
Date Deposited : 26 Nov 2012 10:01
Last Modified : 18 Mar 2020 09:40

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