Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers

McConville, DG, Sweeney, SJ, Adams, AR, Tomic, S and Riechert, H (2007) Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Divisions :	Surrey research (other units)
Authors :	McConville, DG, Sweeney, SJ, Adams, AR, Tomic, S and Riechert, H
Date :	1 January 2007
DOI :	10.1002/pssb.200672575
Contributors :	Contribution Name Email ORCID http://www.loc.gov/loc.terms/relators/PBL WILEY-V C H VERLAG GMBH,
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, INGAASN/GAAS LASERS, SEMICONDUCTORS
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 14:12
Last Modified :	23 Jan 2020 12:53
URI:	http://epubs.surrey.ac.uk/id/eprint/733537

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