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Dark current mechanisms in bulk GaInNAs photodiodes

Soong, WM, Ng, JS, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ, Adams, AR and Allam, J (2008) Dark current mechanisms in bulk GaInNAs photodiodes In: IPRM 2008, 2008-05-25 - 2008-05-29, Versailles, France.

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We have grown a series of bulk GaInNAs p-i-n diodes and identified some of the dark current mechanisms present in our devices. With a nitrogen composition of ~4 %, the band gap can be reduced to 0.94 eV. We also demonstrate that low dark current density is achievable without compromising the absorption and hence quantum efficiency up to 1.4 mum.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
Soong, WM
Ng, JS
Steer, MJ
Hopkinson, M
David, JPR
Chamings, J
Sweeney, SJ
Adams, AR
Allam, J
Date : 2008
DOI : 10.1109/ICIPRM.2008.4702987
Contributors :
Additional Information : © 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 20 Dec 2012 11:40
Last Modified : 31 Oct 2017 14:49

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