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Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers

Hossain, N, Hild, K, Jin, SR, Sweeney, SJ, Yu, S-Q, Johnson, SR, Ding, D and Zhang, Y-H (2010) Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers In: PGC 2010, 2010-12-14 - 2010-12-16, Orchard, Singapore.

Influence of device structures on carrier recombination in GaAsSb-GaAs QW lasers.pdf
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We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated MQW structure leads to a reduced contribution of non-radiative recombination to the threshold current density (Jth) and a high characteristic temperature (T0) of 73K at room temperature.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
Hossain, N
Hild, K
Jin, SR
Sweeney, SJ
Yu, S-Q
Johnson, SR
Ding, D
Zhang, Y-H
Date : 2010
DOI : 10.1109/PGC.2010.5706061
Additional Information : © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Depositing User : Symplectic Elements
Date Deposited : 20 Dec 2012 10:41
Last Modified : 31 Oct 2017 14:49

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