Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures

Jin, SR, Sweeney, SJ, Ahmad, CN, Adams, AR and Murdin, BN (2004) Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures APPLIED PHYSICS LETTERS, 85 (3). pp. 357-359.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics
Authors :	Jin, SR, Sweeney, SJ, Ahmad, CN, Adams, AR and Murdin, BN
Date :	19 July 2004
DOI :	10.1063/1.1772871
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SEMICONDUCTOR-LASERS, THRESHOLD CURRENT, DEPENDENCE, INP, PERFORMANCE
Related URLs :	Author
Additional Information :	Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 85 (3) 357 and may be found at http://apl.aip.org/resource/1/applab/v85/i3/p357_s1 S.R. Jin et al., Appl. Phys. Lett. 85, 357 (2004)
Depositing User :	Symplectic Elements
Date Deposited :	08 Jan 2013 14:27
Last Modified :	06 Jul 2019 05:11
URI:	http://epubs.surrey.ac.uk/id/eprint/733509

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