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Near-field dynamics of broad area diode laser at very high pump levels

Hempel, M, Tomm, JW, Elsaesser, T, Baeumler, M, Konstanzer, H and Mukherjee, J (2011) Near-field dynamics of broad area diode laser at very high pump levels AIP Advances, 1 (4).

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Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale. © 2011 Author(s).

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
Hempel, M
Tomm, JW
Elsaesser, T
Baeumler, M
Konstanzer, H
Mukherjee, J
Date : 2011
DOI : 10.1063/1.3664745
Additional Information :

Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in AIP Advances 1, 042148 and may be found at M. Hempel et al., AIP Advances 1, 042148 (2011)

Depositing User : Symplectic Elements
Date Deposited : 04 Dec 2012 11:30
Last Modified : 31 Oct 2017 14:49

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