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Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots

Marko, IP, Masse, NF, Sweeney, SJ, Adams, AR, Hatori, N, Sugawara, M, Jantsch, W and Schaffler, F (2007) Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

Recombination, transport and loss mechanisms in p-doped InAs-GaAs quantum dots.pdf
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Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
Marko, IP
Masse, NF
Sweeney, SJ
Adams, AR
Hatori, N
Sugawara, M
Jantsch, W
Schaffler, F
Date : 1 January 2007
Contributors :
ContributionNameEmailORCID INST PHYSICS,
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Multidisciplinary, Physics, Condensed Matter, Engineering, Physics, quantum dot laser, p-doping, recombination mechanisms, non-radiative recombination, carrier transport, LASERS
Related URLs :
Additional Information : <p>Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.</p> <p>The following article appeared in AIP Conference Proceedings,and may be found at <A HREF=" /<A>
Depositing User : Symplectic Elements
Date Deposited : 14 Dec 2012 06:36
Last Modified : 31 Oct 2017 14:48

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