Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10), ARTN 1.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Physics
Authors :	Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W
Date :	8 September 2008
DOI :	10.1063/1.2975845
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, QUANTUM-WELL LASERS, GAINNAS ALLOYS, RECOMBINATION, PERFORMANCE, EPITAXY, AUGER
Related URLs :	Author
Additional Information :	Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 93 (10) 101108 and may be found at http://dx.doi.org/10.1063/1.2975845
Depositing User :	Mr Adam Field
Date Deposited :	16 Nov 2012 10:24
Last Modified :	06 Jul 2019 05:11
URI:	http://epubs.surrey.ac.uk/id/eprint/732762

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