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SiGe virtual substrate HMOS transistor for analogue applications

Michelakis, K, Despotopoulos, S, Gaspari, V, Vilches, A, Fobelets, K, Papavassiliou, C, Toumazou, C and Zhang, J (2004) SiGe virtual substrate HMOS transistor for analogue applications Applied Surface Science, 224 (1-4). pp. 386-389.

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Silicon-germanium (SiGe) heterojunction metal-oxide-semiconductor field-effect transistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si Ge "virtual substrate". The n-type transistors were fabricated using a standard MOS process. The channel is a thin, undoped layer of strained Si and is buried below an arsenic-doped Si Ge layer, which provides the carriers. The devices exhibited excellent current-voltage (I-V) characteristics in terms of transconductance and drain current, with no breakdown or leakage. A level-1 model was extracted, for use in circuit design. The results suggest that the realisation of buried-channel SiGe n-HMOSFETs is feasible in MOS processes. These devices are of particular importance in analogue applications. © 2003 Elsevier B.V. All rights reserved.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
Michelakis, K
Despotopoulos, S
Gaspari, V
Vilches, A
Fobelets, K
Papavassiliou, C
Toumazou, C
Zhang, J
Date : 15 March 2004
DOI : 10.1016/j.apsusc.2003.08.065
Additional Information : NOTICE: this is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, 224(1-4), March 2004, DOI 10.1016/j.apsusc.2003.08.065.
Depositing User : Symplectic Elements
Date Deposited : 17 Oct 2012 10:54
Last Modified : 31 Oct 2017 14:45

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