Solution processable nanowire field-effect transistors

Opoku, C, Shkunov, M, Chen, L and Meyer, F (2011) Solution processable nanowire field-effect transistors Materials Research Society Symposium Proceedings, 1287. pp. 69-74.

Preview	Text MRS proceedings_2011.pdf Available under License : See the attached licence file. Download (237kB)
Preview	Text (licence) SRI_deposit_agreement.pdf Download (33kB)

Abstract

Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~10 and hole mobilities of ∼13 cm /Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be used in large area inexpensive electronics. © 2011 Materials Research Society.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Opoku, C, Shkunov, M, Chen, L and Meyer, F
Date :	2011
DOI :	10.1557/opl.2011.1437
Additional Information :	© 2011 Materials Research Society.
Depositing User :	Symplectic Elements
Date Deposited :	09 Oct 2012 11:36
Last Modified :	06 Jul 2019 05:11
URI:	http://epubs.surrey.ac.uk/id/eprint/715281

Actions (login required)

View Item

Downloads