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Laser erasable implanted gratings for integrated silicon photonics

Loiacono, R, Reed, GT, Mashanovich, GZ, Gwilliam, R, Henley, SJ, Hu, YF, Feldesh, R and Jones, R (2011) Laser erasable implanted gratings for integrated silicon photonics Optics Express, 19 (11). pp. 10728-10734.

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In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated implanted Bragg gratings with lengths up to 1000 mu m. Results are also presented, demonstrating that the gratings can be selectively removed by UV pulsed laser annealing, enabling a new concept of laser erasable devices for integrated photonics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
Loiacono, R
Reed, GT
Mashanovich, GZ
Gwilliam, R
Henley, SJ
Hu, YF
Feldesh, R
Jones, R
Date : 23 May 2011
DOI : 10.1364/OE.19.010728
Depositing User : Symplectic Elements
Date Deposited : 14 Sep 2011 10:07
Last Modified : 31 Oct 2017 14:08

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