The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation
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Whelan, S, Kelly, MJ, Gwilliam, R, Jeynes, C and Bongiorno, C (2005) The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation JOURNAL OF APPLIED PHYSICS, 98 (1), ARTN 0.
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| Item Type: | Article | ||||||||||||||||||
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| Divisions : | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre | ||||||||||||||||||
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| Date : | 1 July 2005 | ||||||||||||||||||
| DOI : | 10.1063/1.1940142 | ||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED | ||||||||||||||||||
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| Depositing User : | Mr Adam Field | ||||||||||||||||||
| Date Deposited : | 27 May 2010 14:09 | ||||||||||||||||||
| Last Modified : | 31 Oct 2017 13:58 | ||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/421 |
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