Fluorine-vacancy complexes in ultrashallow B-implanted Si

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5), ARTN 0.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :	Name Email ORCID Abdulmalik, DA Coleman, PG Cowern, NEB Smith, AJ Sealy, BJ Lerch, W Paul, S Cristiano, F
Date :	31 July 2006
DOI :	10.1063/1.2335594
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, BORON THERMAL-DIFFUSION, SILICON, DEFECTS
Related URLs :	Author
Depositing User :	Mr Adam Field
Date Deposited :	27 May 2010 14:09
Last Modified :	31 Oct 2017 13:58
URI:	http://epubs.surrey.ac.uk/id/eprint/416

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