Source-Gated Transistors in Poly-Silicon

Shannon, J M, Dovinos, D, Balon, F, Glasse, C and Brotherton, S D (2005) Source-Gated Transistors in Poly-Silicon IEEE Electron Device Letters, 26 (10).

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Abstract

Source-gated transistors (SGTs) have been made in thin layers of polysilicon formed by excimer laser crystallization of amorphous silicon. It is shown that the main features of the SGT, namely a low saturation voltage and high output impedance can be obtained in poly-silicon. Furthermore the nature of the source barrier enabled it to be pulled down by the influence of the gate to low values giving small activation energies for current transport and reduced temperature sensitivity in the on-state.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Name Email ORCID Shannon, J M j.shannon@surrey.ac.uk Dovinos, D Balon, F Glasse, C Brotherton, S D
Date :	1 January 2005
DOI :	10.1109/LED.2005.855404
Additional Information :	Published in <i>Electron Device Letters,</i> Vol. 26, Iss. 10. Copyright 2005 IEEE. Click <a href=http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55>here</a> to access the journal's website.
Depositing User :	Mr Adam Field
Date Deposited :	27 May 2010 14:08
Last Modified :	16 Jan 2019 16:19
URI:	http://epubs.surrey.ac.uk/id/eprint/368

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