Calculation of electric field and optical transitions in InGaN/GaN quantum wells
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Christmas, UME, Andreev, AD and Faux, DA (2005) Calculation of electric field and optical transitions in InGaN/GaN quantum wells JOURNAL OF APPLIED PHYSICS, 98 (7), ARTN 0.
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| Item Type: | Article | ||||||||||||
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| Divisions : | Faculty of Engineering and Physical Sciences > Physics | ||||||||||||
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| Date : | 1 October 2005 | ||||||||||||
| DOI : | 10.1063/1.2077843 | ||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, III-V NITRIDES, GALLIUM NITRIDE, PIEZOELECTRIC COEFFICIENT, ELASTIC-CONSTANTS, THIN-FILMS, ALUMINUM NITRIDE, GAN, POLARIZATION, ALN, 1ST-PRINCIPLES | ||||||||||||
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| Depositing User : | Mr Adam Field | ||||||||||||
| Date Deposited : | 27 May 2010 14:08 | ||||||||||||
| Last Modified : | 31 Oct 2017 13:57 | ||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/343 |
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