Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy
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Clay, KJ, Speakman, SP, Amaratunga, GAJ and Silva, SRP (1996) Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy JOURNAL OF APPLIED PHYSICS, 79 (9). pp. 7227-7233.
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Official URL: http://jap.aip.org/resource/1/japiau/v79/i9/p7227_...
| Item Type: | Article | |||||||||||||||
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| Divisions : | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre | |||||||||||||||
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| Date : | 1 May 1996 | |||||||||||||||
| DOI : | 10.1063/1.361439 | |||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, AMORPHOUS-CARBON FILMS, LASER-INDUCED PLASMA, DIAMOND, NITRIDE, DISCHARGE, DILUTION, GAS, CH4 | |||||||||||||||
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| Depositing User : | Melanie Hughes | |||||||||||||||
| Date Deposited : | 29 Sep 2010 13:10 | |||||||||||||||
| Last Modified : | 31 Oct 2017 14:05 | |||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/2376 |
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