University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Dopant-Stress Synergy in Si Solid-Phase Epitaxy

Rudawski, N G, Jones, K S and Gwilliam, R (2008) Dopant-Stress Synergy in Si Solid-Phase Epitaxy Applied Physics Letters, 92 (23).


Download (324kB)


The influence of dopants on stressed solid-phase epitaxy of Si was studied in B-doped material up to B concentration of similar to 3.0 x 10(20) cm(-3) and stress of 1.0 +/- 0.1 GPa. As per the generalized Fermi level shifting model of growth enhancement in the presence of electrically active impurities, it is advanced that application of compressive stress may decreases the energy difference between intrinsic Fermi and acceptor levels thus making dopant and stress effects synergistic in growth kinetics. (C) 2008 American Institute of Physics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
Rudawski, N G
Jones, K S
Date : 1 January 2008
DOI : 10.1063/1.2945291
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 92, Iss. 23. Copyright 2008 American Institute of Physics. Click <a href=>here</a> to access the journal's webpage.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:06
Last Modified : 16 Jan 2019 16:18

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800