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Temperature and doping dependence of spin relaxation in n-InAs

Murdin, B. N., Litvinenko, K., Allam, J., Pidgeon, C. R., Bird, M., Morrison, K., Zhang, T., Clowes, S. K., Branford, W. R., Harris, J. and Cohen, L. F. (2005) Temperature and doping dependence of spin relaxation in n-InAs Physical Review B, 72 (085346).


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<p>We have used time-resolved spectroscopy to measure the relaxation of spin polarizations in the narrow gap semiconductor material <i>n</i>-InAs as a function of temperature, doping, and pump wavelength. The results are consistent with the D'Yakonov-Perel mechanism for temperatures between 77 and 300 K. However, the data suggest that electron-electron scattering should be taken into account in determining the dependence of the spin lifetime on the carrier concentration in the range 5.2×10<sup>16–</sup>8.8×10<sup>17</sup> cm<sup>–3</sup>. For a sample with doping of 1.22×10<sup>17</sup> cm<sup>–3</sup> the spin lifetime was 24 ps at room temperature. By applying a magnetic field in the sample plane we also observed coherent precession of the spins in the time domain, with a <i>g>/i> factor <i>g</i><sup>*</sup>=–13, also at room temperature.</p>

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
Murdin, B.
Pidgeon, C. R.
Bird, M.
Morrison, K.
Zhang, T.
Clowes, S.
Branford, W. R.
Harris, J.
Cohen, L. F.
Date : 26 August 2005
DOI : 10.1103/PhysRevB.72.085346
Additional Information : Published in Physical Review B, 72, 085346 (2005). &copy; 2005 The American Physical Society.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:44
Last Modified : 06 Jul 2019 05:07

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