Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers

Marko, Igor, Masse, N, Sweeney, SJ, Adams, AR, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2005) Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers In: 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 22-28 Oct 2005, Sydney, NSW, Australia.

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Abstract

Gain saturation increases the radiative component, J(rad), of the threshold current density, J(th), and its contribution to the thermal sensitivity of J(th) in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.

Item Type:	Conference or Workshop Item (Conference Paper)
Divisions :	Faculty of Engineering and Physical Sciences > Physics
Authors :	Name Email ORCID Marko, Igor I.Marko@surrey.ac.uk Masse, N Sweeney, SJ Adams, AR Sellers, IR Mowbray, DJ Skolnick, MS Liu, HY Groom, KM
Date :	22 October 2005
DOI :	10.1109/LEOS.2005.1548048
Copyright Disclaimer :	2005 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Depositing User :	Mr Adam Field
Date Deposited :	27 May 2010 14:44
Last Modified :	16 Jan 2019 16:22
URI:	http://epubs.surrey.ac.uk/id/eprint/1737

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