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High-resolution temperature sensing with source-gated transistors

Sporea, RA, Shannon, JM and Silva, SRP (2011) High-resolution temperature sensing with source-gated transistors Device Research Conference (DRC), 2011 69th Annual. pp. 61-62.

DRC 2011 Sporea v4.pdf - Accepted version Manuscript
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Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a potential barrier at the source. The gate voltage is used primarily to modulate the effective height of the source barrier. These devices have a number of operational advantages over conventional field-effect transistors, including a potentially much smaller saturation voltage and very low output conductance in saturation, which lead to low power operation and high intrinsic gain.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
Sporea, RA
Shannon, JM
Silva, SRP
Date : 22 June 2011
DOI : 10.1109/DRC.2011.5994463
Contributors :
Uncontrolled Keywords : thin film transistors, temperature sensors, polysilicon, low-power electronics
Additional Information :

Copyright 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Depositing User : Symplectic Elements
Date Deposited : 21 Jan 2012 12:40
Last Modified : 31 Oct 2017 14:20

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