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Novel approach to low substrate temperature synthesis of carbon nanotubes

Chen, GY, Poa, CHP, Stolojan, Vlad and Silva, S (2006) Novel approach to low substrate temperature synthesis of carbon nanotubes In: IEEE Conference on Emerging Technologies - Nanoelectronics, 2006-01-10 - 2006-01-13, Singapore, SINGAPORE.


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We present a novel approach, which will potentially allow for low-temperature-substrate synthesis of carbon nanotubes using direct-current plasma-enhanced chemical vapour deposition. The approach utilizes top-down plasma heating rather than conventional heating from a conventional substrate heater under the electrode. In this work, a relatively thick titanium layer is used as a thermal barrier to create a temperature gradient between the Ni catalyst surface and the substrate. We describe the growth properties as a function of the bias voltage and the hydrocarbon concentrations. The heating during growth is provided solely by the plasma, which is dependent only on the process conditions, which dictate the power density and the cooling of the substrate, plus now the thermal properties of the "barrier layer". This novel approach of using plasma heating and thermal barrier allows for the synthesis of carbon nanotubes at low substrate temperature conditions to be attained with suitable cooling schemes.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
Chen, GY
Poa, CHP
Date : 1 January 2006
DOI : 10.1109/NANOEL.2006.1609724
Contributors :
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Physics, Condensed Matter, Engineering, Science & Technology - Other Topics, Physics, CHEMICAL-VAPOR-DEPOSITION, ROOM-TEMPERATURE, GROWTH, FILAMENTS, ARRAYS, ELECTRODES
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:39
Last Modified : 16 Jan 2019 16:21

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