Comparison of the x-ray spectroscopy response and charge transport properties of semi-insulating In/Al doped CdZnTe crystals

Xu, Y, Sellin, PJ, Lohstroh, A, Jie, W, Wang, T, Mills, C, Veeramani, P and Veale, M (2009) Comparison of the x-ray spectroscopy response and charge transport properties of semi-insulating In/Al doped CdZnTe crystals JOURNAL OF APPLIED PHYSICS, 105 (8), ARTN 0.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Physics
Authors :	Name Email ORCID Xu, Y Sellin, PJ Lohstroh, A Jie, W Wang, T Mills, C Veeramani, P Veale, M
Date :	15 April 2009
DOI :	10.1063/1.3097301
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, aluminium, cadmium compounds, carrier lifetime, deep levels, electron mobility, electron traps, II-VI semiconductors, impurity scattering, indium, interstitials, semiconductor doping, X-ray spectra, zinc compounds, RADIATION DETECTORS, MOBILITY, CDTE
Related URLs :	Author
Additional Information :	Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 105 (8) 083101 and may be found at Y. Xu et al., J. Appl. Phys. 105, 083101 (2009)
Depositing User :	Symplectic Elements
Date Deposited :	13 Jan 2012 15:09
Last Modified :	31 Oct 2017 14:18
URI:	http://epubs.surrey.ac.uk/id/eprint/102451

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