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Sporea, RA, Shannon, JM, Silva, SRP, Trainor, MJ, Young, ND and Guo, X (2011) Performance trade-offs in polysilicon source-gated transistors Solid-State Electronics, 65-66 (1). pp. 246-249.

Sporea, RA, Trainor, MJ, Young, ND, Guo, X, Shannon, JM and Silva, SRP (2011) Performance trade-offs in polysilicon source-gated transistors Solid-State Electronics, 65-66 (1). pp. 246-249.

Sporea, RA, Trainor, MJ, Young, ND, Guo, X, Shannon, JM and Silva, SRP (2011) Performance trade-offs in polysilicon source-gated transistors Solid-State Electronics, 65-66 (1). pp. 246-249.

Michelakis, K, Toumazou, C, Despotopoulos, S, Papavassiliou, C, Vilches, A and Fobelets, K (2005) SiGe HMOSFET monolithic inverting current mirror Solid-State Electronics, 49 (4). pp. 591-594.

Fobelets, K, Jeamsaksiri, W, Papavasilliou, C, Vilches, T, Gaspari, V, Velazquez-Perez, JE, Michelakis, K, Hackbarth, T and König, U (2004) Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies Solid-State Electronics, 48 (8). pp. 1401-1406.

Vilches, A, Fobelets, K, Michelakis, K, Haigh, D, Papavassiliou, C, Hackbath, T and Konig, U (2004) Buried-channel SiGe HMODFET device potential for micropower applications Solid-State Electronics, 48 (8). pp. 1423-1431.

Constantinidis, G, Kuzmic, J, Michelakis, K and Tsagaraki, K (1998) Schottky contacts on CF4/H2 reactive ion etched β-SiC Solid-State Electronics, 42 (2). pp. 253-256.

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