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Number of items: 21.

O'Reilly, EP, Sweeney, SJ, Wang, S and Zide, JMO (2015) Dilute bismides and related alloys Preface SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 09030.

Chai, GMT, Broderick, CA, O'Reilly, EP, Othaman, Z, Jin, SR, Petropoulos, JP, Zhong, Y, Dongmo, PB, Zide, JMO, Sweeney, SJ and Hosea, TJC (2015) Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Delta(so) > E-g SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 09401.

Marko, IP, Jin, SR, Hild, K, Batool, Z, Bushell, ZL, Ludewig, P, Stolz, W, Volz, K, Butkute, R, Pacebutas, V, Geizutis, A, Krotkus, A and Sweeney, SJ (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 0.

Thomas, T, Mellor, A, Hylton, NP, Fuehrer, M, Alonso-Alvarez, D, Braun, A, Ekins-Daukes, NJ, David, JPR and Sweeney, SJ (2015) Requirements for a GaAsBi 1eV sub-cell in a GaAs-based multi-junction solar cell SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 09401.

Jha, A and Sweeney, SJ (2015) Optical, optoelectronic and photonic materials and applications Preface SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (4), ARTN 04030.

Dudeck, KJ, Huante-Ceron, E, Knights, AP, Gwilliam, RM and Botton, GA (2013) Direct observation of indium precipitates in silicon following high dose ion implantation SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12), ARTN 12501.

Lourenco, MA and Homewood, KP (2008) Dislocation-engineered silicon light emitters for photonic integration SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (6), ARTN 06400.

Mashanovich, GZ, Milosevic, M, Matavulj, P, Stankovic, S, Timotijevic, B, Yang, PY, Teo, EJ, Breese, MBH, Bettiol, AA and Reed, GT (2008) Silicon photonic waveguides for different wavelength regions SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (6), ARTN 0.

Reed, G, Paniccia, M, Wada, K and Mashanovich, G (2008) Special issue on silicon photonics SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (6), ARTN 06030.

Wong, L, Milosavljevic, M, Lourenco, MA, Shao, G, Valizadeh, R, Colligon, JS and Homewood, KP (2008) Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 23 (3), ARTN 03500.

Milgram, JN, Knights, AP, Homewood, KP and Gwilliam, RM (2007) Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 22 (10). pp. 1104-1110.

Zhang, T, Harris, JJ, Branford, WR, Clowes, SK, Cohen, LF and Solin, SA (2006) Exploration of the inherent magnetoresistance in InSb thin films SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 21 (12). pp. 1543-1546.

Zhang, T, Harris, JJ, Clowes, SK, Debnath, M, Bennett, A, Cohen, LF, Lyford, T and Fewster, PF (2005) Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20 (12). pp. 1153-1156.

Harris, JJ, Zhang, T, Branford, WR, Clowes, SK, Debnath, M, Bennett, A, Roberts, C and Cohen, LF (2004) The role of impurity band conduction in the low temperature characteristics of thin InSb films grown by molecular beam epitaxy SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (12), PII S0268-. pp. 1406-1410.

Alzanki, T, Gwilliam, R, Emerson, N, Tabatabaian, Z, Jeynes, C and Sealy, BJ (2004) Concentration profiles of antimony-doped shallow layers in silicon SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (6), PII S0. pp. 728-732.

Zhuravlev, KS, Kolosanov, VA, Milekhin, AG, Polovinkin, VG, Shamirzaev, TS, Rakov, YN, Myakishev, YB, Fryar, J, McGlynn, E and Henry, MO (2004) Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions In: 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13), 2003-07-21 - 2003-08-01, Modena, ITALY.

Harmer, P, Halsall, MP, Wolverson, D, Parbrook, PJ and Henley, SJ (2004) Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (3), PII S0268-. L22-L24.

Cole, EAB, Boettcher, T and Snowden, CM (1997) Corrections to the calculation of bulk electron densities in quantum wells of HEMTs SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 12 (1). pp. 100-110.

LOURENCO, MA and HOMEWOOD, KP (1993) PHOTOCONDUCTIVE FREQUENCY-RESOLVED SPECTROSCOPY OF SEMICONDUCTORS - AN ANALYSIS OF LIFETIME DISTRIBUTIONS SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (7). pp. 1277-1282.

PUTTICK, KE, JEYNES, C, RUDMAN, M, GEE, AE and CHAO, CL (1992) SURFACE DAMAGE IN NANOMACHINED SILICON SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 7 (2). pp. 255-259.

THORNTON, J, WEBB, RP, WILSON, IH and PAUS, KC (1988) PREDICTED DOSE, ENERGY AND IMPLANTATION TEMPERATURE EFFECTS ON THE RESIDUAL DISORDER FOLLOWING THE ANNEALING OF PRE-AMORPHIZED SILICON SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 3 (4). pp. 281-285.

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