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Number of items: 12.

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, Oreilly, EP, Butkute, R, Pacebutas, V, Geiutis, A and Krotkus, A (2014) Electrically injected GaAsBi quantum well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 80-81.

Finch, P, Hutchings, M, Blood, P, Smowton, PM, Sobiesierski, A, Gwilliam, RM and Odriscoll, I (2014) Optical bandwidth broadening through lowering of the gain threshold condition in quantum dot devices Conference Digest - IEEE International Semiconductor Laser Conference. pp. 127-128.

O'Driscoll, I, Blood, P, Sobiesierski, A, Gwilliam, R and Smowton, PM (2012) Evaluating InAs QD lasers for space borne applications Conference Digest - IEEE International Semiconductor Laser Conference. pp. 94-95.

Marko, IP, Aldukhayel, AM, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2010) Physical properties of short wavelength 2.6μm InAs/AlSb-based quantum cascade lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 95-96.

O'Brien, K, Adams, AR, Sweeney, SJ, Jin, SR, Ahmad, CN, Murdin, BN, Canedy, CL, Vurgaftman, I and Meyer, JR (2006) Analysis of the major loss processes in mid-infrared type-II "W" diode lasers

Sweeney, SJ, Lyons, LJ, Lock, D and Adams, AR (2002) Direct measurement of facet temperature up to the melting point and COD in high power 980 nm semiconductor diode lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 161-162.

Tomić, S, Fehse, R, Choulis, SA, O'Reilly, EP, Adams, AR, Sweeney, SJ, Andreev, AD, Hosea, TJC and Riechert, H (2002) Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm Lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 41-42.

Jin, SR, Sweeney, SJ, Knowles, G, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum-well lasers using hydrostatic pressure Conference Digest - IEEE International Semiconductor Laser Conference. pp. 83-84.

Sweeney, SJ, Jin, SR, Fehse, R, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation Conference Digest - IEEE International Semiconductor Laser Conference. pp. 43-44.

Knowles, G, Fehse, R, Tomić, S, Sweeney, SJ, Sale, TE, Adams, AR, O'Reilly, EP, Steinle, G and Riechert, H (2002) The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface emitting lasers (VCSELs) Conference Digest - IEEE International Semiconductor Laser Conference. pp. 139-140.

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP and Thijs, PJA (1998) Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature Conference Digest - IEEE International Semiconductor Laser Conference. pp. 63-64.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1998) Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 61-62.

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