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Items where Academic/Research unit is "Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre"

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Number of items: 13.

A

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5), ARTN 0.

Analytis, JG, Ardavan, A, Blundell, SJ, Owen, RL, Garman, EF, Jeynes, Christopher and Powell, BJ (2006) Effect of irradiation-induced disorder on the conductivity and critical temperature of the organic superconductor kappa-(BEDT-TTF)(2)Cu(SCN)(2) PHYSICAL REVIEW LETTERS, 96 (17), ARTN 1.

B

Barradas, NP, Alves, E, Jeynes, C and Tosaki, M (2006) Accurate simulation of backscattering spectra in the presence of sharp resonances NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 247 (2). pp. 381-389.

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18), ARTN 1.

Burr, Edman, Pantouvaki, Marianna, Fice, Martyn, Gwilliam, Russell, Krysa, Andrey, Roberts, John and Seeds, Alwyn (2006) Signal Stability in Periodically Amplified Fiber Transmission Systems Using Multiple Quantum Well Saturable Absorbers for Regeneration Journal of Lightwave Technology, 24 (2). pp. 747-754.

H

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4), ARTN 0.

Han, S Y, Hite, J, Thaler, G T, Frazier, R M, Abernathy, C R, Pearton, S J, Choi, H K, Lee, W O, Park, Y D, Zavada, J M and Gwilliam, R (2006) Effect of Gd Implantation on the Structural and Magnetic Properties of GaN and AlN Applied Physics Letters, 88 (4).

S

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8), ARTN 0.

T

Thomé, T, Colaux, JL and Terwagne, G (2006) Depth profiling of carbon and nitrogen in copper using nuclear reactions Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249 (1-2 SP). pp. 377-380.

Thomé, T, Colaux, JL, Terwagne, G and Louette, P (2006) Formation of carbon nitride compounds during successive implantations in copper Journal of Electron Spectroscopy and Related Phenomena, 151 (1). pp. 19-23.

Z

Zavada, J M, Nepal, N, Lin, J Y, Jiang, H X, Brown, E, Hommerich, U, Hite, J, Thaler, G T, Abernathy, C R, Pearton, S J and Gwilliam, R (2006) Ultraviolet Photoluminescence from Gd-implanted AlN Epilayers Applied Physics Letters, 89 (15).

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