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Items where Academic/Research unit is "Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre"

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Number of items: 15.

B

Bain, M, El Mubarek, H A, Bonar, J M, Wang, Y, Buiu, O, Gamble, H, Armstrong, B M, Hemment, P L, Hall, S and Ashburn, P (2005) SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers IEEE Transactions on Electron Devices, 52 (3).

Bain, M., El Mubarek, A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B. M., Hemment, P. L. F., Hall, Steven and Ashburn, Peter (2005) SiGe HBTs on bonded SOI incorporating buried silicide layers IEEE Transactions on Electron Devices. pp. 317-324.

Balon, F, Shannon, J M and Sealy, B J (2005) Modeling of High-Current Source-Gated Transistors in Amorphous Silicon Applied Physics Letters, 86 (7).

Bollet, F, Gillin, W P, Hopkinson, M and Gwilliam, R (2005) Concentration Dependent Interdiffusion in InGaAs/GaAs as Evidenced by High Resolution X-ray Diffraction and Photoluminescence Spectroscopy Journal of Applied Physics, 97 (1).

C

Colaux, J and Terwagne, G (2005) Simultaneous depth profiling of the C-12 and C-13 elements in different samples using (d,p) reactions NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 240 (1-2). pp. 429-433.

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

E

El Mubarek, H A, Karunaratne, M, Bonar, J M, Dilliway, G D, Wang, Y, Hemment, P L, Willoughby, A F and Ashburn, P (2005) Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in S1-xGex IEEE Transactions on Electron Devices, 52 (4).

El Mubarek, H. A. W., Karunaratne, M., Bonar, J. M., Dilliway, G. D., Wang, Y., Hemment, P. L. F., Willoughby, A. F. and Ashburn, P. (2005) Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si<sub>1-<i>x</i></sub>Ge<sub><i>x</sub></i> x, 52 (4). pp. 518-526.

H

Homewood, KP, Lourenco, MA, Milosavljevic, M, Shao, G and Gwilliam, RM (2005) Dislocation engineered silicon for light emission

L

Lourenco, MA, Milosavljevic, M, Gwilliam, RM, Homewood, KP and Shao, G (2005) On the role of dislocation loops in silicon light emitting diodes APPLIED PHYSICS LETTERS, 87 (20), ARTN 2.

M

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM and Homewood, KP (2005) Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes JOURNAL OF APPLIED PHYSICS, 97 (7), ARTN 0.

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM, Homewood, KP, Edwards, SP, Valizadeh, R and Colligon, JS (2005) Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature JOURNAL OF APPLIED PHYSICS, 98 (12), ARTN 1.

P

Peng, NH, Jeynes, C, Gwilliam, RM, Kirkby, KJ, Webb, RP, Shao, GS, Astill, DA and Liang, WY (2005) A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantation In: 2004 Applied Superconductivity Conference, 2004-10-03 - 2004-10-08, Jacksonville, FL.

W

Webb, RP (2005) Simulation of cluster impact induced desorption and cooling In: 7th International Conference on Computer Simulation of Radiation Effects in Solids, 2004-06-28 - 2004-07-02, Helsinki, FINLAND.

Whelan, S, Kelly, MJ, Gwilliam, R, Jeynes, C and Bongiorno, C (2005) The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation JOURNAL OF APPLIED PHYSICS, 98 (1), ARTN 0.

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