Items where Academic/Research unit is "Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre"

Article

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5). ? - ?. ISSN 0003-6951

Alzanki, T, Gwilliam, R, Emerson, N and Sealy, B J (2004) Differential Hall Effect Profiling of Ultrashallow Junctions in Sb Implanted Silicon Applied Physics Letters, 85 (11). ISSN 00036951

Analytis, JG, Ardavan, A, Blundell, SJ, Owen, RL, Garman, EF, Jeynes, C and Powell, BJ (2006) Effect of irradiation-induced disorder on the conductivity and critical temperature of the organic superconductor kappa-(BEDT-TTF)(2)Cu(SCN)(2) PHYSICAL REVIEW LETTERS, 96 (17). ? - ?. ISSN 0031-9007

Bain, M, El Mubarek, H A, Bonar, J M, Wang, Y, Buiu, O, Gamble, H, Armstrong, B M, Hemment, P L, Hall, S and Ashburn, P (2005) SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers IEEE Transactions on Electron Devices, 52 (3). ISSN 0018-9383

Bain, M., El Mubarek, A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B. M., Hemment, P. L. F., Hall, Steven and Ashburn, Peter (2005) SiGe HBTs on bonded SOI incorporating buried silicide layers IEEE Transactions on Electron Devices . pp. 317-324.

Balon, F, Shannon, J M and Sealy, B J (2005) Modeling of High-Current Source-Gated Transistors in Amorphous Silicon Applied Physics Letters, 86 (7).

Barazzuol, L, Jena, R, Burnet, NG, Meira, LB, Jeynes, JC, Kirkby, KJ and Kirkby, NF (2013) Evaluation of poly (ADP-ribose) polymerase inhibitor ABT-888 combined with radiotherapy and temozolomide in glioblastoma. Radiat Oncol, 8 . 65 - ?. ISSN 1748-717X

Barklie, R. C., O'Raifeartaigh, C., Nylandsted-Larsen, A., Priolo, F., Lulli, G., Grob, J. J., Mesli, A., Lindner, J. K. N., Cristiano, F. and Hemment, P. L. F. (1996) Ion implantation induced damage in relaxed Si_1-xGe_x Proceedings of the 11th International Conference on Ion Implantation Technology .

Barradas, NP and Jeynes, C (2008) Advanced physics and algorithms in the IBA DataFurnace NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 266 (8). 1875 - 1879. ISSN 0168-583X

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18). ? - ?. ISSN 0003-6951

Bollet, F, Gillin, W P, Hopkinson, M and Gwilliam, R (2005) Concentration Dependent Interdiffusion in InGaAs/GaAs as Evidenced by High Resolution X-ray Diffraction and Photoluminescence Spectroscopy Journal of Applied Physics, 97 (1). ISSN 00218979

Bright, NJ, Webb, R, Hinder, SJ, Kirkby, KJ, Ward, NI, Watts, JF, Bleay, S and Bailey, MJ (2012) Determination of the deposition order of overlapping latent fingerprints and inks using Secondary Ion Mass Spectrometry (SIMS). Anal Chem, 84 (9). 4083 - 4087. ISSN 0003-2700

Burr, Edman, Pantouvaki, Marianna, Fice, Martyn, Gwilliam, Russell, Krysa, Andrey, Roberts, John and Seeds, Alwyn (2006) Signal Stability in Periodically Amplified Fiber Transmission Systems Using Multiple Quantum Well Saturable Absorbers for Regeneration Journal of Lightwave Technology, 24 (2). pp. 747-754. ISSN 0733-8724

Bussman, U., Robinson, A. K., Hemment, P. L. F. and Campisi, G. J. (1990) SOI device islands formed by oxygen implantation through patterned masking layers IEEE 1990 SOS/SOI Technology Conference . pp. 51-52.

Butler, T.M., McKinty, C.N., Homewood, K P, Gwilliam, R.M., Kirkby, K.J., Shao, G and Edwards, S (2002) Effect of Implant Conditions on the Optical and Structural Properties of β-FeSi₂ Proceedings of the 14th International Conference on Ion Implantation Technology . pp. 579-582.

Claudio, G, Jeynes, C, Kirkby, KJ, Sealy, BJ, Gwilliam, R, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Electrical behaviour of arsenic implanted silicon wafers at large tilt angle IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS . 614 - 617.

Claudio, G, Kirkby, K J, Bersani, M, Low, R, Sealy, B J and Gwilliam, R (2004) Effect of the Tilt Angle on Antimony in Silicon Implanted Wafers Journal of Applied Physics, 95 (10). ISSN 00218979

Colaux, J and Terwagne, G (2005) Simultaneous depth profiling of the C-12 and C-13 elements in different samples using (d,p) reactions NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 240 (1-2). 429 - 433. ISSN 0168-583X

Colaux, JL, Terwagne, G and Louette, P (2009) XPS and NRA depth profiling of nitrogen and carbon simultaneously implanted into copper to synthesize CN like compounds Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 267 (8-9). 1299 - 1302. ISSN 0168-583X

Colaux, JL, Terwagne, G, Louette, P, Colomer, J-F, Edmondson, PD and Donnelly, SE (2011) Study of carbon nitride compounds synthesised by co-implantation of C and N in copper at different temperatures Materials Chemistry and Physics, 126 (1-2). 337 - 343. ISSN 0254-0584

Colaux, JL, Thomé, T and Terwagne, G (2007) Cross section measurements of the reactions induced by deuteron particles on C Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 254 (1). 25 - 29. ISSN 0168-583X

Coleman, PG, Nash, D, Edwardson, CJ, Knights, AP and Gwilliam, RM (2011) The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy JOURNAL OF APPLIED PHYSICS, 110 (1). ? - ?. ISSN 0021-8979

Costa Pinto, P, Calatroni, S, Neupert, H, Letant-Delrieux, D, Edwards, P, Chiggiato, P, Taborelli, M, Vollenberg, W, Yin-Vallgren, C, Colaux, JL and Lucas, S (2013) Carbon coatings with low secondary electron yield Vacuum . 1 - 8. ISSN 0042-207X

Cristiano, F., Nejim, A. and Hemment, Peter L. F. (1998) The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures 1998 International Conference on Ion Implantation Technology Proceedings, 2 . pp. 913-916.

Crowe, IF, Halsall, MP, Hulko, O, Knights, AP, Gwilliam, RM, Wojdak, M and Kenyon, AJ (2011) Probing the phonon confinement in ultrasmall silicon nanocrystals reveals a size-dependent surface energy JOURNAL OF APPLIED PHYSICS, 109 (8). ? - ?. ISSN 0021-8979

Doria, D, Kakolee, KF, Kar, S, Litt, SK, Fiorini, F, Ahmed, H, Green, S, Jeynes, JCJ, Kavanagh, J, Kirby, D, Kirkby, KJ, Merchant, MJ, Nersisyan, G, Prasad, R, Prise, KM, Schettino, G, Zepf, M and Borghesi, M (2012) Biological effectiveness on live cells of laser driven protons at dose rates exceeding 109 Gy/s AIP Advances, 2 . 011209 - 011215. ISSN 2158-3226

Doria, D, Kakolee, KF, Kar, S, Litt, SK, Fiorini, F, Ahmed, H, Green, S, Jeynes, JCJ, Kavanagh, J, Kirby, D, Kirkby, KJ, Merchant, MJ, Nersisyan, G, Prasad, R, Prise, KM, Schettino, G, Zepf, M and Borghesi, M (2012) Biological effectiveness on live cells of laser driven protons at dose rates exceeding 109 Gy/s AIP Advances, 2 (1). 011209 - 011215. ISSN 2158-3226

Dutra, M, Lourenco, O, Sa Martins, JS, Delfino, A, Stone, JR and Stevenson, PD (2012) Skyrme interaction and nuclear matter constraints PHYSICAL REVIEW C, 85 (3). ISSN 0556-2813

El Mubarek, H A, Bonar, J M, Dilliway, G D, Ashburn, P, Karunaratne, M, Willoughby, A F, Wang, Y, Hemment, P L, Price, R, Zhang, J and Ward, P (2004) Effect of Fluorine Implantation Dose on Boron Thermal Diffusion in Silicon Journal of Applied Physics, 96 (8). ISSN 00218979

El Mubarek, H A, Karunaratne, M, Bonar, J M, Dilliway, G D, Wang, Y, Hemment, P L, Willoughby, A F and Ashburn, P (2005) Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in S1-xGex IEEE Transactions on Electron Devices, 52 (4). ISSN 0018-9383

El Mubarek, H. A. W., Karunaratne, M., Bonar, J. M., Dilliway, G. D., Wang, Y., Hemment, P. L. F., Willoughby, A. F. and Ashburn, P. (2005) Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si_1-<i>x</i>Ge_<i>x</i> x, 52 (4). pp. 518-526.

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Kirkby, K, Collart, EJH and Cowern, NEB (2007) Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator JOURNAL OF APPLIED PHYSICS, 102 (10). ? - ?. ISSN 0021-8979

Fiorini, F, Kirby, D, Borghesi, M, Doria, D, Jeynes, JC, Kakolee, KF, Kar, S, Kaur, S, Kirby, KJ and Merchant, MJ (2011) Dosimetry and spectral analysis of a radiobiological experiment using laser-driven proton beams. Phys Med Biol, 56 (21). 6969 - 6982. ISSN 0031-9155

Galer, S, Hao, L, Gallop, J, Palmans, A, Kirkby, KJ and Nisbet, A (2011) Design Concept for a novel SQUID based Micobolometer Radiation Protection Dosimetry, 143 (2-4). 427 - 431. ISSN 0144-8420

Gilbert, M, Davoisne, C, Stennett, MC, Hyatt, NC, Peng, N, Jeynes, C and Lee, WE (2011) Krypton and helium irradiation damage in yttria-stabilised zirconia Materials Research Society Symposium Proceedings, 1298 . 197 - 202. ISSN 0272-9172

Giles, L. F., Nejim, A., Marsh, C. D., Hemment, P. L. F. and Booker, G. R. (1993) Formation of oxidation induced stacking sacrificial thinning of SIMOX materials Proceedings of the 1993 International SOI Conference . pp. 54-55.

Godfrey, D. J., Chater, R., Robinson, A. K., Augustus, P. D., Alderman, J. R., Davis, J. R., Kilner, J. and Hemment, P. L. F. (1988) Measurement and modelling of arsenic and boron diffusion in oxygen implanted silicon-on-insulator (SOI) layers IEEE Proceedings of the 1988 SOS/SOI Technology Workshop .

Graouil, H., Nejim, A., Hemment, Peter L. F., Riley, L., Hall, S., Mitchell, M. and Ashburn, P. (2000) SiGe device architectures synthesised by local area Ge⁺ implantation-structural and electrical characterisation Conference on Ion Implantation Technology, 2000 . pp. 38-41.

Green, JS, Borghesi, M, Brenner, CM, Carroll, DC, Dover, NP, Foster, PS, Gallegos, P, Green, S, Kirby, D and Kirkby, KJ (2011) Scintillator-based ion beam profiler for diagnosing laser-accelerated ion beams Proceedings of SPIE - The International Society for Optical Engineering, 8079 . ISSN 0277-786X

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4). ? - ?. ISSN 0003-6951

Hamilton, JJ, Cowern, NEB, Sharp, JA, Kirkby, KJ, Collart, EJH, Colombeau, B, Bersani, M, Giubertoni, D and Parisini, A (2006) Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface APPLIED PHYSICS LETTERS, 89 (4). ? - ?. ISSN 0003-6951

Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9). ? - ?. ISSN 0003-6951

Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9). ? - ?. ISSN 0003-6951

Han, S Y, Hite, J, Thaler, G T, Frazier, R M, Abernathy, C R, Pearton, S J, Choi, H K, Lee, W O, Park, Y D, Zavada, J M and Gwilliam, R (2006) Effect of Gd Implantation on the Structural and Magnetic Properties of GaN and AlN Applied Physics Letters, 88 (4). ISSN 00036951

Jeynes, C, Bailey, MJ, Bright, NJ, Christopher, ME, Grime, GW, Jones, BN, Palitsin, VV and Webb, RP (2012) "total IBA" - Where are we? Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 271 . 107 - 118. ISSN 0168-583X

Jeynes, C, Bailey, MJ, Bright, NJ, Christopher, ME, Grime, GW, Jones, BN, Palitsin, VV and Webb, RP (2012) "total IBA" - Where are we? Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 271 . 107 - 118. ISSN 0168-583X

Jeynes, C, Barradas, NP, Marriott, PK, Boudreault, G, Jenkin, M, Wendler, E and Webb, RP (2003) Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36 (7). R97 - R126. ISSN 0022-3727

Jeynes, C, Barradas, NP and Szilágyi, E (2012) Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering Spectrometry Analytical Chemistry, 84 . 6061 - 6069. ISSN 0003-2700

Jianqing, Wen, Evans-Freeman, J., Peaker, A. R., Zhang, J. P., Hemment, Peter L. F., Marsh, C. D. and Booker, G. R. (2000) Role of oxygen on the implantation related residual defects in silicon IEEE Proceedings of Electron Devices Meeting, Hong Kong, 2000. . pp. 112-115.

Kunz, V. Dominik, Uchino, Takashi, De Groot, C. H. (Kees), Ashburn, Peter, Donaghy, David C., Hall, Steven, Wang, Yun and Hemment, P. L. F. (2003) Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation IEEE Transactions on Electron Devices . pp. 1487-1493.

Lin, Chenglu, Wang, Lianwai, Zhu, Shiyang, Liu, Ping, Hemment, P. L. F. and Zou, Shichang (1995) Investigation of Ti, Co and Fe silicides on SIMOX materials 4th International Conference on Solid-State and Integrated Circuit Technology . pp. 248-252.

Lourenço, M, Gwilliam, R and Homewood, K (2011) Eye-safe 2 μm luminescence from thulium-doped silicon. Opt Lett, 36 (2). 169 - 171. ISSN 0146-9592

Lourenço, MA and Homewood, KP (2011) Crystalline-silicon-based infra-red LEDs and routes to laser diodes Thin Solid Films, 519 (24). 8441 - 8445. ISSN 0040-6090

Lourenco, MA, Gwilliam, RM and Homewood, KP (2007) Extraordinary optical gain from silicon implanted with erbium APPLIED PHYSICS LETTERS, 91 (14). ? - ?. ISSN 0003-6951

Lourenco, MA, Gwilliam, RM and Homewood, KP (2008) Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band APPLIED PHYSICS LETTERS, 92 (16). ? - ?. ISSN 0003-6951

Lourenco, MA, Milosavljevic, M, Gwilliam, RM, Homewood, KP and Shao, G (2005) On the role of dislocation loops in silicon light emitting diodes APPLIED PHYSICS LETTERS, 87 (20). ? - ?. ISSN 0003-6951

Lu, Dian-Tong, Qingcheng, Zheng, Mitchell, Ian V., Hemment, P. L. F. and Ryssel, H. (1995) A new determination method of very low Fe contamination by UFS 4th International Conference on Solid-State and Integrated Circuit Technology .

Marsh, C. D., Booker, G. R., Nejim, A., Giles, L. F., Hemment, P. L. F., Li, Y., Chater, R. J., Kilner, J. A., Wainwright, S. and Hall, S. (1992) Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation Proceedings of the 1992 International SOI Conference . pp. 6-8.

Milosavljevic, M, Lourenco, MA, Gwilliam, RM and Homewood, KP (2011) Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes JOURNAL OF APPLIED PHYSICS, 110 (3). ? - ?. ISSN 0021-8979

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM and Homewood, KP (2005) Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes JOURNAL OF APPLIED PHYSICS, 97 (7). ? - ?. ISSN 0021-8979

Milosavljevic, M, Shao, G, Lourenco, MA, Gwilliam, RM, Homewood, KP, Edwards, SP, Valizadeh, R and Colligon, JS (2005) Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature JOURNAL OF APPLIED PHYSICS, 98 (12). ? - ?. ISSN 0021-8979

Mitchell, M., Nigrin, S., Cristiano, F., Ashburn, P. and Hemment, Peter L. F. (1999) Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge⁺ implantation 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications . pp. 254-259.

Nejim, A., Cristiano, F., Gwilliam, R. M., Hemment, P. L. F., Hope, D. A. O., Newey, J. and Houlton, M. R. (1996) Synthesis of Si/Si_1-xGe_x/Si heterostructures for device applications using Ge⁺ implantation into silicon Proceedings of the 11th International Conference on Ion Implantation Technology .

Nejim, A., Cristiano, F., Knights, A. P., Barradas, N. P., Hemment, P. L. F. and Coleman, P. G. (1998) Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis Proceedings of the 1998 International Conference on Ion Implantation Technology, 2 . pp. 692-695.

Ney, A, Papakonstantinou, P, Kumar, A, Shang, N-G and Peng, N (2011) Irradiation enhanced paramagnetism on graphene nanoflakes Applied Physics Letters, 99 (10). ISSN 0003-6951

Niby, MA, Li, DQ, Lourenco, MA, Nejim, A, Homewood, KP, Hemment, PLF, Ishidida, E, Current, M, Banerjee, S, Larson, L, Mehta, S, Tasch, A, Smith, TC and Romig, T (1997) The lifetime distribution of excess carriers in H+ ion implanted silicon by photoconductive frequency resolved spectroscopy ION IMPLANTATION TECHNOLOGY - 96 . 668 - 671.

O'Reilly, L, Horan, K, McNally, PJ, Bennett, NS, Cowern, NEB, Lankinen, A, Sealy, BJ, Gwilliam, RM, Noakes, TCQ and Bailey, P (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials APPLIED PHYSICS LETTERS, 92 (23). ? - ?. ISSN 0003-6951

Pantouvaki, M, Fice, M J, Feced, R, Burr, E P, Gwilliam, R, Krysa, A B, Roberts, J S and Seeds, A J (2004) 10-Gb/s All-Optical 2R Regeneration Using an MQW Fabry-Perot Saturable Absorber and a Nonlinear Fiber IEEE Photonics Technology Letters, 16 (2). ISSN 1041-1135

Pantouvaki, M, Renaud, C C, Cannard, P, Robertson, M J, Gwilliam, R and Seeds, A J (2007) Fast Tuneable InGaAsP DBR Laser Using Quantum-Confined Stark-Effect-Induced Refractive Index Change IEEE Journal of Selected Topics in Quantum Electronics, 13 (5). ISSN 1077-260X

Papaioannou, G., Ioannou-Sugleridis, V., Cristoloveanu, S., Bruel, M. and Hemment, P. (1988) Investigation of trapping properties in SIMOX films by photo-induced transient current spectroscopy IEEE Proceedings of the 1988 SOS/SOI Technology Workshop .

Pérez-Rodríguez, A., Martín, E., Samitier, J., Jiménez, J., Morante, J. R., Hemment, P. L. F. and Homewood, K. P. (1991) In depth resolved analysis of SIMOX materials by optical characterization techniques Proceedings of the IEEE International SOI Conference, 1991 . pp. 110-111.

Peng, N, Shao, G, Jeynes, C, Webb, RP, Gwilliam, RM, Boudreault, G, Astill, DM and Liang, WY (2003) Ion beam synthesis of superconducting MgB2 thin films APPLIED PHYSICS LETTERS, 82 (2). 236 - 238. ISSN 0003-6951

Perez, A., Samitier, J., Cornet, A., Morante, J. R., Hemment, P. L. F. and Homewood, K. P. (1990) Infrared reflection spectroscopy analysis of SIMOX material obtained by multiple implant IEEE 1990 SOS/SOI Technology Conference . pp. 63-64.

Pi, X D, Coleman, P G, Harding, R, Davies, G and Gwilliam, R M (2004) Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide Journal of Applied Physics, 95 (12). ISSN 00218979

Renaud, C C, Pantouvaki, M, Gregoire, S, Lealman, I, Cannard, P, Cole, S, Moore, R, Gwilliam, R and Seeds, A J (2007) A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator IEEE Journal of Quantum Electronics, 43 (11). ISSN 0018-9197

Robinson, A. K., Bussman, U., Hemment, P. L. F., Sharma, V. and Kilner, J. A. (1990) Dopant redistribution and activation in thin film SOI/SIMOX substrates 1990 IEEE SOS/SOI Technology Conference . pp. 71-72.

Robinson, A. K., Reeson, K. J., Hemment, P. L. F., Thomas, N., Davis, J. R., Christensen, K. N., Marsh, C., Booker, G. R., Kilner, J. A. and Chater, R. J. (1988) Total dielectric isolation (TDI) of silicon device islands by a single O⁺implantation stage IEEE Proceedings of the 1988 SOS/SOI Technology Workshop .

Rudawski, N G, Jones, K S and Gwilliam, R (2008) Dopant-Stress Synergy in Si Solid-Phase Epitaxy Applied Physics Letters, 92 (23). ISSN 00036951

Rudawski, N G, Jones, K S and Gwilliam, R (2007) Solid Phase Epitaxy in Uniaxially Stressed (001) Si Applied Physics Letters, 91 (17). ISSN 00036951

Rudawski, N G, Jones, K S and Gwillliam, R (2008) Kinetics and Morphological Instabilities of Stressed Solid-Solid Phase Transformations Physical Review Letters, 100 (16). ISSN 0031-9007

Scapellato, GG, Boninelli, S, Napolitani, E, Bruno, E, Smith, AJ, Mirabella, S, Mastromatteo, M, De Salvador, D, Gwilliam, R, Spinella, C, Carnera, A and Priolo, F (2011) Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters PHYSICAL REVIEW B, 84 (2). ? - ?. ISSN 1098-0121

Schiz, J. F. W., Lamb, Andrew C., Cristiano, Fuccio, Bonar, J. M., Ashburn, Peter, Hall, Stephen and Hemment, P. L. F. (2001) Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy IEEE Transactions on Electron Devices . pp. 2492-2499.

Sharp, JA, Cowern, NEB, Webb, RP, Kirkby, KJ, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Cristiano, F and Fazzini, PF (2006) Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans APPLIED PHYSICS LETTERS, 89 (19). ? - ?. ISSN 0003-6951

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8). ISSN 0003-6951

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8). ISSN 0003-6951

Shtereva, KS, Novotny, I, Tvarozek, V, Vojs, M, Flickyngerova, S, Sutta, P, Vincze, A, Milosavljević, M, Jeynes, C and Peng, N (2012) Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation Electronic Materials and Processing ECS Journal of Solid State Science and Technology, 1 (5). 237 - 240. ISSN 2162-8769

Slotte, J, Rummukainen, M, Tuomisto, F, Markevich, VP, Peaker, AR, Jeynes, C and Gwilliam, RM (2008) Evolution of vacancy-related defects upon annealing of ion-implanted germanium PHYSICAL REVIEW B, 78 (8). ? - ?. ISSN 1098-0121

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8). ? - ?. ISSN 0003-6951

Thomas, N. J., Davis, J. R., Reeson, K. J., Hemment, P. L. F., Keen, J., Castledine, J., Brumhead, D., Goulding, M., Alderman, J., Farr, J. P. G. and Earwaker, L. G. (1988) A comparison of fully depleted SOI-CMOS transistors in FIPOS and SIMOX substrates IEEE Proceedings of the 1988 SOS/SOI Technology Workshop .

Thomé, T, Colaux, JL and Terwagne, G (2006) Depth profiling of carbon and nitrogen in copper using nuclear reactions Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249 (1-2 SPEC. ISS.). 377 - 380. ISSN 0168-583X

Thomé, T, Colaux, JL, Terwagne, G, Colomer, J-F and Bertoni, G (2007) Formation of carbon nitride nanospheres by ion implantation Materials Chemistry and Physics, 103 (2-3). 290 - 294. ISSN 0254-0584

Thomé, T, Colaux, JL, Terwagne, G and Louette, P (2006) Formation of carbon nitride compounds during successive implantations in copper Journal of Electron Spectroscopy and Related Phenomena, 151 (1). 19 - 23. ISSN 0368-2048

Vyatkin, A. F., Avrutin, V. S., Izyumskaya, N. F., Egorov, V. K., Starkov, V. V., Zinenko, V. I., Smirnova, I. A., Hemment, Peter L. F., Nejim, A., Vdovin, V. I. and Yugova, T. G. (2000) Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers Conference on Ion Implantation Technology, 2000. . pp. 70-72.

Waite, A. M., Lloyd, N. S., Ashburn, P., Evans, A. G. R., Ernst, T., Achard, H., Deleonibus, S., Wang, Y. and Hemment, Peter L. F. (2003) Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects 33rd Conference on European Solid-State Device Research, 2003 . pp. 223-226.

Whelan, S, Kelly, MJ, Gwilliam, R, Jeynes, C and Bongiorno, C (2005) The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation JOURNAL OF APPLIED PHYSICS, 98 (1). ? - ?. ISSN 0021-8979

Zavada, J M, Nepal, N, Lin, J Y, Jiang, H X, Brown, E, Hommerich, U, Hite, J, Thaler, G T, Abernathy, C R, Pearton, S J and Gwilliam, R (2006) Ultraviolet Photoluminescence from Gd-implanted AlN Epilayers Applied Physics Letters, 89 (15). ISSN 00036951

Book Section

Jeynes, C and Barradas, NP (2009) Pitfalls in Ion Beam Analysis In: Handbook of Modern Ion Beam Materials Analysis. Materials Research Society, Warrendale Pennsylvania, 347 - 383. ISBN 1605112151

Conference or Workshop Item

Ahmed, S, Amirov, K, Larsson, U, Too, P, Sealy, B J and Gwilliam, R (2003) Thermal Processing Effects in Proton-Isolated N-Type GaAs Devices In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Barradas, NP, Arstila, K, Battistig, G, Bianconi, M, Dytlewski, N, Jeynes, C, Kotai, E, Lulli, G, Mayer, M, Rauhala, E, Szilagyi, E and Thompson, M (2008) Summary of "IAEA intercomparison of IBA software" In: 18th International Conference on Ion Beam Analysis, 2007-09-23 - 2007-09-28, Univ Hyderabad, Sch Phys, Hyderabad, INDIA.

Claudio, G, Boudreault, G, Jeynes, C, Sealy, BJ, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Absolute dose performance of the SWIFT single wafer ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.

Cowern, NEB, Smith, AJ, Colombeau, B, Gwilliam, R, Sealy, BJ and Collart, EJH (2005) Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions In: IEEE International Electron Devices Meeting, 2005-12-05 - 2005-12-07, Washington, DC.

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Cowern, NEB, Kirkby, K and Collart, EJH (2007) Boron pile-up phenomena during ultra shallow junction formation

Gwilliam, R (2002) Boron Bromide as a Source Precursor for Low Energy Applications In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720).

Homewood, KP, Lourenco, MA, Milosavljevic, M, Shao, G and Gwilliam, RM (2005) Dislocation engineered silicon for light emission

Jeynes, C, Zoppi, G, Forbes, I, Bailey, MJ and Peng, N (2009) Characterisation of thin film chalcogenide PV materials using MeV ion beam analysis In: International Conference on Sustainable Power Generation and Supply, 2009-04-06 - 2009-04-07, Nanjing, PEOPLES R CHINA.

Kang, DJ, Peng, NH, Jeynes, C, Webb, R, Lee, HN, Oh, B, Moon, SH, Burnell, G, Stelmashenko, NA, Tarte, EJ, Moore, DF and Blamire, MG (2003) Josephson effects in MgB2 metal masked ion damage junctions In: Applied Superconductivity Conference, 2002-08-04 - 2002-08-09, HOUSTON, TEXAS.

Kang, DJ, Speaks, R, Peng, NH, Webb, R, Jeynes, C, Booij, WE, Tarte, EJ, Moore, DF and Blamire, MG (2001) Nanometer scale masked ion damage barriers in YBa2Cu3O7-delta In: 2000 Applied Superconductivity Conference, 2000-09-17 - 2000-09-22, VIRGINIA BEACH, VIRGINIA.

Merchant, MJ, Grime, GW and Palitsin, V (2010) The influence of stray DC magnetic fields in MeV ion nanobeam systems In: 19th International Conference on Ion Beam Analysis, 2009-09-07 - 2009-09-11, Univ Cambridge, Cambridge, ENGLAND.

Peach, K, Cobb, J, Yokoi, T, Gardner, I, Edgecock, R, Poole, M, Pozimski, J, Cywinski, B, Jones, B, McKenna, G, Vojnovic, B, Folkard, M, Kirkby, K, Webb, R, Barlow, R and Elliott, A (2007) PAMELA - A model for an FFAG based hadron therapy machine

Peng, NH, Jeynes, C, Gwilliam, RM, Kirkby, KJ, Webb, RP, Shao, GS, Astill, DA and Liang, WY (2005) A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantation In: 2004 Applied Superconductivity Conference, 2004-10-03 - 2004-10-08, Jacksonville, FL.

Peng, NH, Kang, DJ, Jeynes, C, Webb, RP, Moore, DF, Blamire, MG and Chakarov, IR (2003) High quality YBa2Cu3O7-delta Josephson junctions and junction arrays fabricated by masked proton beam irradiation damage In: Applied Superconductivity Conference, 2002-08-04 - 2002-08-09, HOUSTON, TEXAS.

Smith, A J, Colombeau, B, Gwilliam, R, Collart, E, Cowern, N E B and Sealy, B J (2004) Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions: Bulk and SOI

Too, P, Ahmed, S, Jakiela, R, Barcz, A, Kozanecki, A, Sealy, B J and Gwilliam, R (2003) Implant Isolation of Both n-Type InP and InGaAs by Iron Irradiation: Effect of Post-Implant Annealing Temperature In: The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003..

Too, P, Ahmed, S, Sealy, B J and Gwilliam, R (2002) An Effective Electrical Isolation Scheme by Iron Implantation at Different Substrate Temperatures In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720).

Webb, RP (2005) Simulation of cluster impact induced desorption and cooling In: 7th International Conference on Computer Simulation of Radiation Effects in Solids, 2004-06-28 - 2004-07-02, Helsinki, FINLAND.

Webb, RP and Hadzievski, L (2004) Computer simulation of energetic cluster impacts on solid surfaces In: 22nd Summer School and International Symposium on the Physics of Ionized Gases, 2004-08-23 - 2004-08-27, Tara Natl Pk, YUGOSLAVIA.

Zurrug, H, Mefo, J, Sealy, B, Boudreault, G, Jeynes, C, Webb, RP, Kirkby, KJ, Collart, EJH, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Characterization and enviromental impact of plasma products within an ion implanter In: 14th International Conference on Ion Implantation Technology, 2002-09-18 - 2002-09-27, TAOS, NM.