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Items where Author is "Wendler, E"

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Number of items: 7.


Seah, MP, Spencer, SJ, Bensebaa, F, Vickridge, I, Danzebrink, H, Krumrey, M, Gross, T, Oesterle, W, Wendler, E, Rheinländer, B, Azuma, Y, Kojima, I, Suzuki, N, Suzuki, M, Tanuma, S, Moon, DW, Lee, HJ, Cho, HM, Chen, HY, Wee, ATS, Osipowicz, T, Pan, JS, Jordaan, WA, Hauert, R, Klotz, U, Van Der Marel, C, Verheijen, M, Tamminga, Y, Jeynes, C, Bailey, P, Biswas, S, Falke, U, Nguyen, NV, Chandler-Horowitz, D, Ehrstein, JR, Muller, D and Dura, JA (2004) Critical review of the current status of thickness measurements for ultrathin SiO on Si Part V: Results of a CCQM pilot study Surface and Interface Analysis, 36 (9). pp. 1269-1303.

Jeynes, C, Barradas, NP, Marriott, PK, Boudreault, G, Jenkin, M, Wendler, E and Webb, RP (2003) Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36 (7), PII S0. R97-R126.

Barradas, NP, Jeynes, C, Webb, RP and Wendler, E (2002) Accurate determination of the stopping power of He-4 in Si using Bayesian inference NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 194 (1), PII S0168-. pp. 15-25.

Boudreault, G, Jeynes, C, Wendler, E, Nejim, A, Webb, RP and Watjen, U (2002) Accurate RBS measurement of ion implant doses in a silicon SURFACE AND INTERFACE ANALYSIS, 33 (6). pp. 478-486.

Gurbich, AF, Barradas, NP, Jeynes, C and Wendler, E (2002) Applying elastic backscattering spectrometry when the nuclear excitation function has a fine structure NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 190, PII S0168-. pp. 237-240.

Conference or Workshop Item

Baker, MA, Greaves, SJ, Wendler, E and Fox, V (2000) A comparison of in situ polishing and ion beam sputtering as surface preparation methods for XPS analysis of PVD coatings In: 27th International Conference on Metallurgical Coatings and Thin Films, 2000-04-10 - 2000-04-14, SAN DIEGO, CALIFORNIA.

Nejim, A, Barradas, NP, Jeynes, C, Cristiano, F, Wendler, E, Gartner, K and Sealy, BJ (1998) Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling In: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), 1997-08-26 - 1997-08-30, EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS.

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