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Items where Author is "Wendler, E"

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Number of items: 7.

Article

Seah, MP, Spencer, SJ, Bensebaa, F, Vickridge, I, Danzebrink, H, Krumrey, M, Gross, T, Oesterle, W, Wendler, E, Rheinländer, B, Azuma, Y, Kojima, I, Suzuki, N, Suzuki, M, Tanuma, S, Moon, DW, Lee, HJ, Cho, HM, Chen, HY, Wee, ATS, Osipowicz, T, Pan, JS, Jordaan, WA, Hauert, R, Klotz, U, Van Der Marel, C, Verheijen, M, Tamminga, Y, Jeynes, C, Bailey, P, Biswas, S, Falke, U, Nguyen, NV, Chandler-Horowitz, D, Ehrstein, JR, Muller, D and Dura, JA (2004) Critical review of the current status of thickness measurements for ultrathin SiO on Si Part V: Results of a CCQM pilot study Surface and Interface Analysis, 36 (9). pp. 1269-1303.

Jeynes, C, Barradas, NP, Marriott, PK, Boudreault, G, Jenkin, M, Wendler, E and Webb, RP (2003) Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36 (7), PII S0. R97-R126.

Barradas, NP, Jeynes, C, Webb, RP and Wendler, E (2002) Accurate determination of the stopping power of He-4 in Si using Bayesian inference NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 194 (1), PII S0168-. pp. 15-25.

Boudreault, G, Jeynes, C, Wendler, E, Nejim, A, Webb, RP and Watjen, U (2002) Accurate RBS measurement of ion implant doses in a silicon SURFACE AND INTERFACE ANALYSIS, 33 (6). pp. 478-486.

Gurbich, AF, Barradas, NP, Jeynes, C and Wendler, E (2002) Applying elastic backscattering spectrometry when the nuclear excitation function has a fine structure NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 190, PII S0168-. pp. 237-240.

Conference or Workshop Item

Baker, MA, Greaves, SJ, Wendler, E and Fox, V (2000) A comparison of in situ polishing and ion beam sputtering as surface preparation methods for XPS analysis of PVD coatings In: 27th International Conference on Metallurgical Coatings and Thin Films, 2000-04-10 - 2000-04-14, SAN DIEGO, CALIFORNIA.

Nejim, A, Barradas, NP, Jeynes, C, Cristiano, F, Wendler, E, Gartner, K and Sealy, BJ (1998) Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling In: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5), 1997-08-26 - 1997-08-30, EINDHOVEN UNIV, EINDHOVEN, NETHERLANDS.

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