Items where Author is "Vinh, N Q"
 | Up a level |
Group by: Item Type | No Grouping
Number of items: 4.
Weber, W, Golub, L E, Danilov, S N, Karch, J, Reitmaier, C, Wittmann, B, Bel'kov, W, Ivchenko, E L, Kvon, Z D, Vinh, N Q, van der Meer, A F, Murdin, B and Ganichev, S D (2008) Quantum Ratchet Effects Induced by Terahertz Radiation in GaN-Based Two-Dimensional Structures Physical Review B, 77 (24). ISSN 1098-0121
Rauter, P, Fromherz, T, Vinh, N Q, Murdin, B N, Phillips, J P, Pidgeon, C R, Diehl, L, Dehlinger, G, Grutzmacher, D, Zhao, M, Ni, W X and Bauer, G (2007) Direct Determination of Ultrafast Intersubband Hole Relaxation Times in Voltage Biased SiGe Quantum Wells by a Density Matrix Interpretation of Femtosecond Resolved Photocurrent Experiments New Journal of Physics, 9 (5). ISSN 1367-2630
Califano, M, Vinh, N Q, Phillips, P J, Ikonic, Z, Kelsall, R W, Harrison, P, Pidgeon, C R, Murdin, B N, Paul, D J, Townsend, P, Zhang, J, Ross, I M and Cullis, A G (2007) Interwell Relaxation Times in p-Si/SiGe Asymmetric Quantum Well Structures: Role of Interface Roughness Physical Review B, 75 (4). ISSN 1098-0121
Rauter, P, Fromherz, T, Bauer, G, Vinh, N Q, Murdin, B N, Phillips, J P, Pidgeon, C R, Diehl, L, Dehlinger, G and Grutzmacher, D (2006) Direct Monitoring of the Excited State Population in Biased SiGe Valence Band Quantum Wells by Femtosecond Resolved Photocurrent Experiments Applied Physics Letters, 89 (21). ISSN 00036951