Items where Author is "Vinh, N. Q."

Article

Weber, W., Golub, L. E., Danilov, S. N., Karch, J., Reitmaier, C., Wittmann, B., Bel'kov, V. V., Ivchenko, E. L., Kvon, Z. D., Vinh, N. Q., van der Meer, A. F. G., Murdin, B. N. and Ganichev, S. D. (2008) Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures Physical Review B, 77 (245304). ISSN 1098-0121

Rauter, P., Fromherz, T., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., Diehl, L., Dehlinger, G., Grützmacher, D., Zhao, Ming, Ni, Wei-Xin and Bauer, G. (2007) Direct determination of ultrafast intersubband hole relaxation times in voltage biased SiGe quantum wells by a density matrix interpretation of femtosecond resolved photocurrent experiments New Journal of Physics, 9 (128). ISSN 1367-2630

Califano, Marco, Vinh, N. Q., Phillips, P. J., Ikonić, Z., Kelsall, R. W., Harrison, P., Pidgeon, C. R., Murdin, B. N., Paul, D. J., Townsend, P., Zhang, J., Ross, I. M. and Cullis, A.G. (2007) Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness Physical Review B, 75 (045338). ISSN 1098-0121

Rauter, P., Fromherz, T., Bauer, G., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., Diehl, L., Dehlinger, G. and Grützmacher, D. (2006) Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments Applied Physics Letters, 211111 (2006). ISSN 00036951

Conference or Workshop Item

Rauter, P., Fromherz, T., Bauer, G., Vinh, N. Q., Phillips, P. J., Pidgeon, C. R., Murdin, B. N., Diehl, L., Dehlinger, G. and Grutzmacher, D. (2006) Direct Measurement of HH2-HH1 Intersubband Lifetimes in SiGe Quantum Cascade Structures