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Items where Author is "Uchida, T"

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Number of items: 7.

Article

Jin, SR, Fehse, R, Sweeney, SJ, Knowles, G, Adams, AR, O'Reilly, EP, Reichert, H, Illek, S, Egorov, AY, Thijs, PJA, Uchida, T and Fujii, T (2002) Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure ELECTRONICS LETTERS, 38 (7). pp. 325-327.

Sweeney, SJ, Higashi, T, Andreev, A, Adams, AR, Uchida, T and Fujii, T (2001) Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (2). pp. 573-579.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1999) Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 5 (3). pp. 413-419.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1999) Observation of reduced nonradiative current in 1.3-mu m AlGaInAs-InP strained MQW lasers IEEE PHOTONICS TECHNOLOGY LETTERS, 11 (4). pp. 409-411.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1998) Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 61-62.

Sweeney, SJ, Higashi, T, Adams, AR, Uchida, T and Fujii, T (1998) Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure ELECTRONICS LETTERS, 34 (22). pp. 2130-2132.

Conference or Workshop Item

Sweeney, SJ, Higashi, T, Adams, AR, Uchida, T and Fujii, T (2000) A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure In: XXXVIIth Meeting of the European-High-Pressure-Research-Group (EHPRG), 1999-09-09 - 1999-09-11, UNIV MONTPELLIER, MONTPELLIER, FRANCE.

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