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Items where Author is "Tomic, S"

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Number of items: 17.

Article

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Tomic, S, Sweeney, SJ, O'Reilly, EP and Adams, AR (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers IEEE J SEL TOP QUANT, 15 (3). pp. 799-807.

Jin, SR, Ahmad, CN, Sweeney, SJ, Adams, AR, Murdin, BN, Page, H, Marcadet, X, Sirtori, C and Tomic, S (2006) Spectroscopy of GaAs/AlGaAs quantum-cascade lasers using hydrostatic pressure APPLIED PHYSICS LETTERS, 89 (22), ARTN 2.

Jin, S R, Ahmad, C N, Sweeney, S J, Adams, A R, Murdin, B N, Page, H, Marcadet, X, Sirtori, C and Tomic, S (2006) Spectroscopy of GaAs/AlGaAs Quantum-Cascade Lasers Using Hydrostatic Pressure Applied Physics Letters, 89 (22).

Jin, SR, Sweeney, Stephen, Tomic, S, Adams, Alfred and Riechert, H (2003) High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1196-1201.

Knowles, G, Fehse, R, Tomic, S, Sweeney, Stephen, Sale, TE, Adams, Alfred, O'Reilly, P, Steinle, G and Riechert, H (2003) Investigation of 1.3-mu m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modelling techniques IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1202-1208.

Tomic, S, O'Reilly, EP, Fehse, R, Sweeney, Stephen, Adams, Alfred, Andreev, Aleksey, Choulis, SA, Hosea, Thomas and Riechert, H (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1228-1238.

Constant, SB, Tomic, S, Lock, D, Sale, TE, Sweeney, SJ and Hosea, TJC (2003) Spectroscopic characterization of 1450 nm semiconductor pump laser structures for Raman amplifiers JOURNAL OF APPLIED PHYSICS, 93 (12). pp. 9446-9455.

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) Unusual increase of the Auger recombination current in 1.3 mu m GaInNAs quantum-well lasers under high pressure APPLIED PHYSICS LETTERS, 82 (14). pp. 2335-2337.

Fehse, R, Tomic, S, Adams, AR, Sweeney, SJ, O'Reilly, EP, Andreev, A and Riechert, H (2002) A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8 (4). pp. 801-810.

Conference or Workshop Item

Marko, IP, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomic, S (2009) Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure In: 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), 2008-07-22 - 2008-07-25, Fortaleza, BRAZIL.

Marko, IP, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomic, S (2008) Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure In: IEEE 21st International Semiconductor Laser Conference, 2008-09-14 - 2008-09-18, Sorrento, ITALY.

McConville, DG, Sweeney, SJ, Adams, AR, Tomic, S and Riechert, H (2007) Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Fehse, R, Adams, AR, Sweeney, SJ, Tomic, S, Reichart, H and Ramakrishnan, A (2003) Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers In: Spring Meeting of the European-Materials-Research-Society (E-MRS), 2002-06-18 - 2002-06-21, STRASBOURG, FRANCE.

Knowles, G, Tomic, S, Jin, S, Fehse, R, Sweeney, SJ, Sale, TE and Adams, AR (2003) Gain-cavity alignment profiling of 1.3 mu m emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Sweeney, SJ, Jin, SR, Tomic, S, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2003) Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 mu m quantum well lasers In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Adams, AR, Fehse, R, Tomic, S, O'Reilly, EP, Andreev, A, Knowles, G, Sale, TE, Sweeney, SJ, Steinle, G, Ramakrishnan, A and Riechert, H (2002) Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure In: Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002), 2002-10-15 - 2002-10-18, SHANGHAI, PEOPLES R CHINA.

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