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Items where Author is "Terwagne, G"

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Number of items: 18.

Article

Colaux, JL, Terwagne, G and Jeynes, C (2015) On the traceably accurate voltage calibration of electrostatic accelerators NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 349. pp. 173-183.

Barba, D, Cai, RS, Demarche, J, Wang, YQ, Terwagne, G, Rosei, F, Martin, F and Ross, GG (2014) Influence of silicon dangling bonds on germanium thermal diffusion within SiO2 glass Applied Physics Letters, 104 (11).

Barba, D, Demarche, J, Martin, F, Terwagne, G and Ross, GG (2013) Control of the Ge nanocrystal synthesis by co-implantation of Si + Journal of Applied Physics, 114 (7).

Barba, D, Demarche, J, Martin, F, Terwagne, G and Ross, GG (2012) Trapping of diffusing germanium by silicon excess co-implanted into fused silica Applied Physics Letters, 101 (14).

Barba, D, Martin, F, Demarche, J, Terwagne, G and Ross, GG (2012) Nanocavities and germanium nanocrystals produced by Ge ion implantation in fused silica. Nanotechnology, 23 (14).

Demarche, J, Barba, D, Ross, GG and Terwagne, G (2012) Ionoluminescence induced by low-energy proton excitation of Si nanocrystals embedded in silica Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 272. pp. 141-144.

Demarche, J, Barba, D, Ross, GG and Terwagne, G (2011) Ionodeterioration of the silicon nanocrystal photoluminescence Journal of Applied Physics, 110 (11).

Yedji, M, Demarche, J, Terwagne, G, Delamare, R, Flandre, D, Barba, D, Koshel, D and Ross, GG (2011) Method for fabricating third generation photovoltaic cells based on Si quantum dots using ion implantation into SiO2 Journal of Applied Physics, 109 (8).

Colaux, JL, Terwagne, G, Louette, P, Colomer, J-F, Edmondson, PD and Donnelly, SE (2011) Study of carbon nitride compounds synthesised by co-implantation of C and N in copper at different temperatures Materials Chemistry and Physics, 126 (1-2). pp. 337-343.

Demarche, J, Yedji, M and Terwagne, G (2010) Depth-profiling of implanted 28Si by (α,α) and (α,p0) reactions Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 268 (11-12). pp. 2107-2110.

Barba, D, Koshel, D, Martin, F, Ross, GG, Chicoine, M, Schiettekatte, F, Yedji, M, Demarche, J and Terwagne, G (2010) Silicon nanocrystal synthesis by implantation of natural Si isotopes Journal of Luminescence, 130 (4). pp. 669-673.

Colaux, JL, Terwagne, G and Louette, P (2009) XPS and NRA depth profiling of nitrogen and carbon simultaneously implanted into copper to synthesize CN like compounds Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 267 (8-9). pp. 1299-1302.

Thomé, T, Colaux, JL, Terwagne, G, Colomer, J-F and Bertoni, G (2007) Formation of carbon nitride nanospheres by ion implantation Materials Chemistry and Physics, 103 (2-3). pp. 290-294.

Colaux, JL, Thomé, T and Terwagne, G (2007) Cross section measurements of the reactions induced by deuteron particles on C Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 254 (1). pp. 25-29.

Demarche, J and Terwagne, G (2006) Precise measurement of the differential cross section from the 16O (α,α) 16O elastic reaction at 165° and 170° between 2.4 and 6.0 MeV Journal of Applied Physics, 100 (12).

Thomé, T, Colaux, JL and Terwagne, G (2006) Depth profiling of carbon and nitrogen in copper using nuclear reactions Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 249 (1-2 SP). pp. 377-380.

Thomé, T, Colaux, JL, Terwagne, G and Louette, P (2006) Formation of carbon nitride compounds during successive implantations in copper Journal of Electron Spectroscopy and Related Phenomena, 151 (1). pp. 19-23.

Colaux, J and Terwagne, G (2005) Simultaneous depth profiling of the C-12 and C-13 elements in different samples using (d,p) reactions NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 240 (1-2). pp. 429-433.

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